| 161 | A variation-aware design for storage cells using Schottky-barrier-type GNRFETs | Erfan Abbasian, Morteza Gholipour | Journal of Computational Electronics | 2020 |
| 162 | Design space exploration of low-power flip-flops in FinFET technology | Ehsan Mahmoodi, Morteza Gholipour | INTEGRATION-THE VLSI JOURNAL | 2020 |
| 163 | Nanoscale field effect diode (FED) with improved speed and ION/IOFF ratio | Arash Rezaei, Bahram Azizollah-Ganji, Morteza Gholipour | IET Circuits Devices and Systems | 2019 |
| 164 | Nanoscale field effect diode (FED) with improved speed and ION/IOFF ratio | Arash Rezaei, Bahram Azizollah-Ganji, Morteza Gholipour | IET Circuits Devices and Systems | 2019 |
| 165 | Nanoscale field effect diode (FED) with improved speed and ION/IOFF ratio | Arash Rezaei, Bahram Azizollah-Ganji, Morteza Gholipour | IET Circuits Devices and Systems | 2019 |
| 166 | Nanoscale field effect diode (FED) with improved speed and ION/IOFF ratio | Arash Rezaei, Bahram Azizollah-Ganji, Morteza Gholipour | IET Circuits Devices and Systems | 2019 |
| 167 | Nanoscale field effect diode (FED) with improved speed and ION/IOFF ratio | Arash Rezaei, Bahram Azizollah-Ganji, Morteza Gholipour | IET Circuits Devices and Systems | 2019 |
| 168 | Nanoscale field effect diode (FED) with improved speed and ION/IOFF ratio | Arash Rezaei, Bahram Azizollah-Ganji, Morteza Gholipour | IET Circuits Devices and Systems | 2019 |
| 169 | Compact Modeling to Device-and Circuit-Level Evaluation of Flexible TMD Field-Effect Transistors | Morteza Gholipour, Ying-Yu Chen, Deming Chen | IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 2018 |
| 170 | Effects of the Channel Length on the Nanoscale Field Effect Diode Performance | Arash Rezaei, Bahram Azizollah-Ganji, Morteza Gholipour | Journal of Optoelectronical Nanostructures | 2018 |
| 171 | Compact Modeling to Device-and Circuit-Level Evaluation of Flexible TMD Field-Effect Transistors | Morteza Gholipour, Ying-Yu Chen, Deming Chen | IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 2018 |
| 172 | Effects of the Channel Length on the Nanoscale Field Effect Diode Performance | Arash Rezaei, Bahram Azizollah-Ganji, Morteza Gholipour | Journal of Optoelectronical Nanostructures | 2018 |
| 173 | Compact Modeling to Device-and Circuit-Level Evaluation of Flexible TMD Field-Effect Transistors | Morteza Gholipour, Ying-Yu Chen, Deming Chen | IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 2018 |
| 174 | Effects of the Channel Length on the Nanoscale Field Effect Diode Performance | Arash Rezaei, Bahram Azizollah-Ganji, Morteza Gholipour | Journal of Optoelectronical Nanostructures | 2018 |
| 175 | Compact Modeling to Device-and Circuit-Level Evaluation of Flexible TMD Field-Effect Transistors | Morteza Gholipour, Ying-Yu Chen, Deming Chen | IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 2018 |
| 176 | Effects of the Channel Length on the Nanoscale Field Effect Diode Performance | Arash Rezaei, Bahram Azizollah-Ganji, Morteza Gholipour | Journal of Optoelectronical Nanostructures | 2018 |
| 177 | Compact Modeling to Device-and Circuit-Level Evaluation of Flexible TMD Field-Effect Transistors | Morteza Gholipour, Ying-Yu Chen, Deming Chen | IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 2018 |
| 178 | Effects of the Channel Length on the Nanoscale Field Effect Diode Performance | Arash Rezaei, Bahram Azizollah-Ganji, Morteza Gholipour | Journal of Optoelectronical Nanostructures | 2018 |
| 179 | Compact Modeling to Device-and Circuit-Level Evaluation of Flexible TMD Field-Effect Transistors | Morteza Gholipour, Ying-Yu Chen, Deming Chen | IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 2018 |
| 180 | Effects of the Channel Length on the Nanoscale Field Effect Diode Performance | Arash Rezaei, Bahram Azizollah-Ganji, Morteza Gholipour | Journal of Optoelectronical Nanostructures | 2018 |