CV


FA
Morteza Gholipour

Morteza Gholipour

Associate Professor

CV
FA
Morteza Gholipour

Associate Professor Morteza Gholipour

Papers in Journals

#Paper TitleAuthorsJournalPublished At
 
141A Comprehensive Analysis of Different SRAM Cell Topologies in 7-nm FinFET TechnologyErfan Abbasian, Shilpi Birla, Morteza GholipourSilicon2021
142A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise MarginsErfan Abbasian, Farzaneh Izadinasab, Morteza GholipourIEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS2021
143Single-ended half-select disturb-free 11T static random access memory cell for reliable and low power applicationsErfan Abbasian, Morteza GholipourINTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS2021
144Design of a Low-Power Short-Channel Electrostatically Doped Silicene Nanoribbon FETArmin Gooran shoorakchaly, Alireza Aghanejad Ahmadchally, Samaneh Soleimani-Amiri, Morteza GholipourIEEE TRANSACTIONS ON ELECTRON DEVICES2021
145Half-select disturb-free single-ended 9-transistor SRAM cell with bit-interleaving scheme in TMDFET technologyFarzaneh Izadinasab, Morteza GholipourMICROELECTRONICS JOURNAL2021
146Investigation of 6-armchair graphene nanoribbon tunnel FETsAlireza Aghanejad Ahmadchally, Morteza GholipourJournal of Computational Electronics2021
147Design of a Schmitt-Trigger-Based 7T SRAM cell for variation resilient Low-Energy consumption and reliable internet of things applicationsErfan Abbasian, Morteza GholipourAEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS2021
148Performance evaluation of GNRFET and TMDFET devices in static random access memory cells designErfan Abbasian, Morteza Gholipour, Farzaneh IzadinasabINTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS2021
149A Comprehensive Analysis of Different SRAM Cell Topologies in 7-nm FinFET TechnologyErfan Abbasian, Shilpi Birla, Morteza GholipourSilicon2021
150A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise MarginsErfan Abbasian, Farzaneh Izadinasab, Morteza GholipourIEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS2021
151A variation-aware design for storage cells using Schottky-barrier-type GNRFETsErfan Abbasian, Morteza GholipourJournal of Computational Electronics2020
152Design space exploration of low-power flip-flops in FinFET technologyEhsan Mahmoodi, Morteza GholipourINTEGRATION-THE VLSI JOURNAL2020
153A variation-aware design for storage cells using Schottky-barrier-type GNRFETsErfan Abbasian, Morteza GholipourJournal of Computational Electronics2020
154Design space exploration of low-power flip-flops in FinFET technologyEhsan Mahmoodi, Morteza GholipourINTEGRATION-THE VLSI JOURNAL2020
155A variation-aware design for storage cells using Schottky-barrier-type GNRFETsErfan Abbasian, Morteza GholipourJournal of Computational Electronics2020
156Design space exploration of low-power flip-flops in FinFET technologyEhsan Mahmoodi, Morteza GholipourINTEGRATION-THE VLSI JOURNAL2020
157A variation-aware design for storage cells using Schottky-barrier-type GNRFETsErfan Abbasian, Morteza GholipourJournal of Computational Electronics2020
158Design space exploration of low-power flip-flops in FinFET technologyEhsan Mahmoodi, Morteza GholipourINTEGRATION-THE VLSI JOURNAL2020
159A variation-aware design for storage cells using Schottky-barrier-type GNRFETsErfan Abbasian, Morteza GholipourJournal of Computational Electronics2020
160Design space exploration of low-power flip-flops in FinFET technologyEhsan Mahmoodi, Morteza GholipourINTEGRATION-THE VLSI JOURNAL2020
Showing 141-160 of 216 items.