Papers in Journals
| # | Paper Title | Authors | Journal | Published At |
|---|---|---|---|---|
| 101 | Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM | Erfan Abbasian, Shilpi Birla, Morteza Gholipour | MICROELECTRONICS JOURNAL | 2022 |
| 102 | A Single-Bitline 9T SRAM for Low-Power Near-Threshold Operation in FinFET Technology | Erfan Abbasian, Morteza Gholipour, Shilpi Birla | ARABIAN JOURNAL FOR SCIENCE AND ENGINEERING | 2022 |
| 103 | Single-ended half-select disturb-free 11T static random access memory cell for reliable and low power applications | Erfan Abbasian, Morteza Gholipour | INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS | 2021 |
| 104 | Design of a Low-Power Short-Channel Electrostatically Doped Silicene Nanoribbon FET | Armin Gooran shoorakchaly, Alireza Aghanejad Ahmadchally, Samaneh Soleimani-Amiri, Morteza Gholipour | IEEE TRANSACTIONS ON ELECTRON DEVICES | 2021 |
| 105 | Half-select disturb-free single-ended 9-transistor SRAM cell with bit-interleaving scheme in TMDFET technology | Farzaneh Izadinasab, Morteza Gholipour | MICROELECTRONICS JOURNAL | 2021 |
| 106 | Investigation of 6-armchair graphene nanoribbon tunnel FETs | Alireza Aghanejad Ahmadchally, Morteza Gholipour | Journal of Computational Electronics | 2021 |
| 107 | Design of a Schmitt-Trigger-Based 7T SRAM cell for variation resilient Low-Energy consumption and reliable internet of things applications | Erfan Abbasian, Morteza Gholipour | AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS | 2021 |
| 108 | Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design | Erfan Abbasian, Morteza Gholipour, Farzaneh Izadinasab | INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS | 2021 |
| 109 | A Comprehensive Analysis of Different SRAM Cell Topologies in 7-nm FinFET Technology | Erfan Abbasian, Shilpi Birla, Morteza Gholipour | Silicon | 2021 |
| 110 | A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise Margins | Erfan Abbasian, Farzaneh Izadinasab, Morteza Gholipour | IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS | 2021 |
| 111 | Single-ended half-select disturb-free 11T static random access memory cell for reliable and low power applications | Erfan Abbasian, Morteza Gholipour | INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS | 2021 |
| 112 | Design of a Low-Power Short-Channel Electrostatically Doped Silicene Nanoribbon FET | Armin Gooran shoorakchaly, Alireza Aghanejad Ahmadchally, Samaneh Soleimani-Amiri, Morteza Gholipour | IEEE TRANSACTIONS ON ELECTRON DEVICES | 2021 |
| 113 | Half-select disturb-free single-ended 9-transistor SRAM cell with bit-interleaving scheme in TMDFET technology | Farzaneh Izadinasab, Morteza Gholipour | MICROELECTRONICS JOURNAL | 2021 |
| 114 | Investigation of 6-armchair graphene nanoribbon tunnel FETs | Alireza Aghanejad Ahmadchally, Morteza Gholipour | Journal of Computational Electronics | 2021 |
| 115 | Design of a Schmitt-Trigger-Based 7T SRAM cell for variation resilient Low-Energy consumption and reliable internet of things applications | Erfan Abbasian, Morteza Gholipour | AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS | 2021 |
| 116 | Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design | Erfan Abbasian, Morteza Gholipour, Farzaneh Izadinasab | INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS | 2021 |
| 117 | A Comprehensive Analysis of Different SRAM Cell Topologies in 7-nm FinFET Technology | Erfan Abbasian, Shilpi Birla, Morteza Gholipour | Silicon | 2021 |
| 118 | A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise Margins | Erfan Abbasian, Farzaneh Izadinasab, Morteza Gholipour | IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS | 2021 |
| 119 | Single-ended half-select disturb-free 11T static random access memory cell for reliable and low power applications | Erfan Abbasian, Morteza Gholipour | INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS | 2021 |
| 120 | Design of a Low-Power Short-Channel Electrostatically Doped Silicene Nanoribbon FET | Armin Gooran shoorakchaly, Alireza Aghanejad Ahmadchally, Samaneh Soleimani-Amiri, Morteza Gholipour | IEEE TRANSACTIONS ON ELECTRON DEVICES | 2021 |
Showing 101-120 of 216 items.