Papers in Journals
| # | Paper Title | Authors | Journal | Published At |
|---|---|---|---|---|
| 121 | Half-select disturb-free single-ended 9-transistor SRAM cell with bit-interleaving scheme in TMDFET technology | Farzaneh Izadinasab, Morteza Gholipour | MICROELECTRONICS JOURNAL | 2021 |
| 122 | Investigation of 6-armchair graphene nanoribbon tunnel FETs | Alireza Aghanejad Ahmadchally, Morteza Gholipour | Journal of Computational Electronics | 2021 |
| 123 | Design of a Schmitt-Trigger-Based 7T SRAM cell for variation resilient Low-Energy consumption and reliable internet of things applications | Erfan Abbasian, Morteza Gholipour | AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS | 2021 |
| 124 | Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design | Erfan Abbasian, Morteza Gholipour, Farzaneh Izadinasab | INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS | 2021 |
| 125 | A Comprehensive Analysis of Different SRAM Cell Topologies in 7-nm FinFET Technology | Erfan Abbasian, Shilpi Birla, Morteza Gholipour | Silicon | 2021 |
| 126 | A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise Margins | Erfan Abbasian, Farzaneh Izadinasab, Morteza Gholipour | IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS | 2021 |
| 127 | Single-ended half-select disturb-free 11T static random access memory cell for reliable and low power applications | Erfan Abbasian, Morteza Gholipour | INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS | 2021 |
| 128 | Design of a Low-Power Short-Channel Electrostatically Doped Silicene Nanoribbon FET | Armin Gooran shoorakchaly, Alireza Aghanejad Ahmadchally, Samaneh Soleimani-Amiri, Morteza Gholipour | IEEE TRANSACTIONS ON ELECTRON DEVICES | 2021 |
| 129 | Half-select disturb-free single-ended 9-transistor SRAM cell with bit-interleaving scheme in TMDFET technology | Farzaneh Izadinasab, Morteza Gholipour | MICROELECTRONICS JOURNAL | 2021 |
| 130 | Investigation of 6-armchair graphene nanoribbon tunnel FETs | Alireza Aghanejad Ahmadchally, Morteza Gholipour | Journal of Computational Electronics | 2021 |
| 131 | Design of a Schmitt-Trigger-Based 7T SRAM cell for variation resilient Low-Energy consumption and reliable internet of things applications | Erfan Abbasian, Morteza Gholipour | AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS | 2021 |
| 132 | Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design | Erfan Abbasian, Morteza Gholipour, Farzaneh Izadinasab | INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS | 2021 |
| 133 | A Comprehensive Analysis of Different SRAM Cell Topologies in 7-nm FinFET Technology | Erfan Abbasian, Shilpi Birla, Morteza Gholipour | Silicon | 2021 |
| 134 | A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise Margins | Erfan Abbasian, Farzaneh Izadinasab, Morteza Gholipour | IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS | 2021 |
| 135 | Single-ended half-select disturb-free 11T static random access memory cell for reliable and low power applications | Erfan Abbasian, Morteza Gholipour | INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS | 2021 |
| 136 | Design of a Low-Power Short-Channel Electrostatically Doped Silicene Nanoribbon FET | Armin Gooran shoorakchaly, Alireza Aghanejad Ahmadchally, Samaneh Soleimani-Amiri, Morteza Gholipour | IEEE TRANSACTIONS ON ELECTRON DEVICES | 2021 |
| 137 | Half-select disturb-free single-ended 9-transistor SRAM cell with bit-interleaving scheme in TMDFET technology | Farzaneh Izadinasab, Morteza Gholipour | MICROELECTRONICS JOURNAL | 2021 |
| 138 | Investigation of 6-armchair graphene nanoribbon tunnel FETs | Alireza Aghanejad Ahmadchally, Morteza Gholipour | Journal of Computational Electronics | 2021 |
| 139 | Design of a Schmitt-Trigger-Based 7T SRAM cell for variation resilient Low-Energy consumption and reliable internet of things applications | Erfan Abbasian, Morteza Gholipour | AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS | 2021 |
| 140 | Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design | Erfan Abbasian, Morteza Gholipour, Farzaneh Izadinasab | INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS | 2021 |
Showing 121-140 of 216 items.