CV


FA
Morteza Gholipour

Morteza Gholipour

Associate Professor

CV
FA
Morteza Gholipour

Associate Professor Morteza Gholipour

Papers in Journals

#Paper TitleAuthorsJournalPublished At
 
61Improved read/write assist mechanism for 10-transistor static random access memory cellErfan Abbasian, Morteza GholipourINTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS2022
62Semi-analytical SPICE-compatible ballistic I-V model for 5 nm channel MoS2 FETsEhsan Gholinataj, Alireza Aghanejad Ahmadchally, Armin Gooran shoorakchaly, Morteza GholipourJournal of Computational Electronics2022
63Improved read/write assist mechanism for 10-transistor static random access memory cellErfan Abbasian, Morteza GholipourINTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS2022
64Design of a Highly Stable and Robust 10T SRAM Cell for Low-Power Portable ApplicationsErfan Abbasian, Morteza GholipourCIRCUITS SYSTEMS AND SIGNAL PROCESSING2022
65Enhanced overloaded code division multiple access for network on chipBehnam Vakili, Morteza GholipourIET Computers and Digital Techniques2022
66Enhanced overloaded code division multiple access for network on chipBehnam Vakili, Morteza GholipourIET Computers and Digital Techniques2022
67Design of a Highly Stable and Robust 10T SRAM Cell for Low-Power Portable ApplicationsErfan Abbasian, Morteza GholipourCIRCUITS SYSTEMS AND SIGNAL PROCESSING2022
68Improved read/write assist mechanism for 10-transistor static random access memory cellErfan Abbasian, Morteza GholipourINTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS2022
69Robust transmission gate-based 10T subthreshold SRAM for internet-of-things applicationsErfan Abbasian, Morteza GholipourSEMICONDUCTOR SCIENCE AND TECHNOLOGY2022
70Semi-analytical SPICE-compatible ballistic I-V model for 5 nm channel MoS2 FETsEhsan Gholinataj, Alireza Aghanejad Ahmadchally, Armin Gooran shoorakchaly, Morteza GholipourJournal of Computational Electronics2022
71Robust transmission gate-based 10T subthreshold SRAM for internet-of-things applicationsErfan Abbasian, Morteza GholipourSEMICONDUCTOR SCIENCE AND TECHNOLOGY2022
72Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAMErfan Abbasian, Shilpi Birla, Morteza GholipourMICROELECTRONICS JOURNAL2022
73A Single-Bitline 9T SRAM for Low-Power Near-Threshold Operation in FinFET TechnologyErfan Abbasian, Morteza Gholipour, Shilpi BirlaARABIAN JOURNAL FOR SCIENCE AND ENGINEERING2022
74A Schmitt-Trigger-Based Low-Voltage 11 T SRAM Cell for Low-Leakage in 7-nm FinFET TechnologyErfan Abbasian, Elangovan Mani, Morteza Gholipour, Mehrzad Karamimanesh, Mohd Sahid, Adil ZaidiCIRCUITS SYSTEMS AND SIGNAL PROCESSING2022
75A low-leakage single-bitline 9T SRAM cell with read-disturbance removal and high writability for low-power biomedical applicationsErfan Abbasian, Morteza GholipourINTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS2022
76A 9T high-stable and Low-Energy Half-Select-Free SRAM Cell Design using TMDFETsErfan Abbasian, Shilpi Birla, Morteza GholipourANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING2022
77A low-leakage single-bitline 9T SRAM cell with read-disturbance removal and high writability for low-power biomedical applicationsErfan Abbasian, Morteza GholipourINTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS2022
78A Schmitt-Trigger-Based Low-Voltage 11 T SRAM Cell for Low-Leakage in 7-nm FinFET TechnologyErfan Abbasian, Elangovan Mani, Morteza Gholipour, Mehrzad Karamimanesh, Mohd Sahid, Adil ZaidiCIRCUITS SYSTEMS AND SIGNAL PROCESSING2022
79Robust transmission gate-based 10T subthreshold SRAM for internet-of-things applicationsErfan Abbasian, Morteza GholipourSEMICONDUCTOR SCIENCE AND TECHNOLOGY2022
80A Single-Bitline 9T SRAM for Low-Power Near-Threshold Operation in FinFET TechnologyErfan Abbasian, Morteza Gholipour, Shilpi BirlaARABIAN JOURNAL FOR SCIENCE AND ENGINEERING2022
Showing 61-80 of 216 items.