Articles
| # | Paper Title | Authors | Publication/Conference | Date | Type |
|---|---|---|---|---|---|
| 1 | Efficient fully parallel convolutional neural network architecture using 1-memristor and 1-transistor (1M1T) | Ahmad Reza Usefzadeh Chari, Morteza Gholipour, Mohammad Reza Hassanzadeh | JOURNAL OF SUPERCOMPUTING | 2025 | Article In Publication |
| 2 | Reliable leakage-enabled memristor model for large-scale circuits | Mohammad Milad Rabiee, Morteza Gholipour, Nima TaheriNejad | Journal of Computational Electronics | 2025 | Article In Publication |
| 3 | Efficient fully parallel convolutional neural network architecture using 1-memristor and 1-transistor (1M1T) | Ahmad Reza Usefzadeh Chari, Morteza Gholipour, Mohammad Reza Hassanzadeh | JOURNAL OF SUPERCOMPUTING | 2025 | Article In Publication |
| 4 | Efficient fully parallel convolutional neural network architecture using 1-memristor and 1-transistor (1M1T) | Ahmad Reza Usefzadeh Chari, Morteza Gholipour, Mohammad Reza Hassanzadeh | JOURNAL OF SUPERCOMPUTING | 2025 | Article In Publication |
| 5 | Efficient fully parallel convolutional neural network architecture using 1-memristor and 1-transistor (1M1T) | Ahmad Reza Usefzadeh Chari, Morteza Gholipour, Mohammad Reza Hassanzadeh | JOURNAL OF SUPERCOMPUTING | 2025 | Article In Publication |
| 6 | Reliable leakage-enabled memristor model for large-scale circuits | Mohammad Milad Rabiee, Morteza Gholipour, Nima TaheriNejad | Journal of Computational Electronics | 2025 | Article In Publication |
| 7 | Reliable leakage-enabled memristor model for large-scale circuits | Mohammad Milad Rabiee, Morteza Gholipour, Nima TaheriNejad | Journal of Computational Electronics | 2025 | Article In Publication |
| 8 | Efficient fully parallel convolutional neural network architecture using 1-memristor and 1-transistor (1M1T) | Ahmad Reza Usefzadeh Chari, Morteza Gholipour, Mohammad Reza Hassanzadeh | JOURNAL OF SUPERCOMPUTING | 2025 | Article In Publication |
| 9 | Reliable leakage-enabled memristor model for large-scale circuits | Mohammad Milad Rabiee, Morteza Gholipour, Nima TaheriNejad | Journal of Computational Electronics | 2025 | Article In Publication |
| 10 | Efficient fully parallel convolutional neural network architecture using 1-memristor and 1-transistor (1M1T) | Ahmad Reza Usefzadeh Chari, Morteza Gholipour, Mohammad Reza Hassanzadeh | JOURNAL OF SUPERCOMPUTING | 2025 | Article In Publication |
| 11 | Reliable leakage-enabled memristor model for large-scale circuits | Mohammad Milad Rabiee, Morteza Gholipour, Nima TaheriNejad | Journal of Computational Electronics | 2025 | Article In Publication |
| 12 | Reliable leakage-enabled memristor model for large-scale circuits | Mohammad Milad Rabiee, Morteza Gholipour, Nima TaheriNejad | Journal of Computational Electronics | 2025 | Article In Publication |
| 13 | FinFET-Based Feedback Control Assisted Near-Threshold SRAM Cell | Bahare Geraylotanha, Morteza Gholipour | IETE TECHNICAL REVIEW | 2024 | Article In Publication |
| 14 | An energy-efficient design of ternary SRAM using GNRFETs | Maedeh Orooji, Erfan Abbasian, Morteza Gholipour | INTERNATIONAL JOURNAL OF ELECTRONICS | 2024 | Article In Publication |
| 15 | Optimized ternary GNRFET-based n-trit full adder with redefined operators | Maedeh Orooji, Morteza Gholipour | Engineering Research Express | 2024 | Article In Publication |
| 16 | FinFET-Based Feedback Control Assisted Near-Threshold SRAM Cell | Bahare Geraylotanha, Morteza Gholipour | IETE TECHNICAL REVIEW | 2024 | Article In Publication |
| 17 | Transition metal dichalcogenide FET-based dynamic random-access memory | Mahdieh Raoofi, Morteza Gholipour | INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS | 2024 | Article In Publication |
| 18 | Optimized ternary GNRFET-based n-trit full adder with redefined operators | Maedeh Orooji, Morteza Gholipour | Engineering Research Express | 2024 | Article In Publication |
| 19 | FinFET-Based Feedback Control Assisted Near-Threshold SRAM Cell | Bahare Geraylotanha, Morteza Gholipour | IETE TECHNICAL REVIEW | 2024 | Article In Publication |
| 20 | Transition metal dichalcogenide FET-based dynamic random-access memory | Mahdieh Raoofi, Morteza Gholipour | INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS | 2024 | Article In Publication |
Showing 1-20 of 20 items.