CV


FA
Morteza Gholipour

Morteza Gholipour

Associate Professor

CV
FA
Morteza Gholipour

Associate Professor Morteza Gholipour

Papers in Journals

#Paper TitleAuthorsJournalPublished At
 
181A Compact Short-Channel Model for Symmetric Double-Gate TMDFET in Subthreshold RegionMorteza GholipourIEEE TRANSACTIONS ON ELECTRON DEVICES2017
182A Compact Short-Channel Model for Symmetric Double-Gate TMDFET in Subthreshold RegionMorteza GholipourIEEE TRANSACTIONS ON ELECTRON DEVICES2017
183A Compact Short-Channel Model for Symmetric Double-Gate TMDFET in Subthreshold RegionMorteza GholipourIEEE TRANSACTIONS ON ELECTRON DEVICES2017
184A Compact Short-Channel Model for Symmetric Double-Gate TMDFET in Subthreshold RegionMorteza GholipourIEEE TRANSACTIONS ON ELECTRON DEVICES2017
185A Compact Short-Channel Model for Symmetric Double-Gate TMDFET in Subthreshold RegionMorteza GholipourIEEE TRANSACTIONS ON ELECTRON DEVICES2017
186A Compact Short-Channel Model for Symmetric Double-Gate TMDFET in Subthreshold RegionMorteza GholipourIEEE TRANSACTIONS ON ELECTRON DEVICES2017
187Analytical SPICE-Compatible Model of Schottky-Barrier-Type GNRFETs With Performance AnalysisMorteza Gholipour, Ying-Yu Chen, Amit Sangai, Nasser Masoumi, Deming ChenIEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS2016
188Analytical SPICE-Compatible Model of Schottky-Barrier-Type GNRFETs With Performance AnalysisMorteza Gholipour, Ying-Yu Chen, Amit Sangai, Nasser Masoumi, Deming ChenIEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS2016
189Analytical SPICE-Compatible Model of Schottky-Barrier-Type GNRFETs With Performance AnalysisMorteza Gholipour, Ying-Yu Chen, Amit Sangai, Nasser Masoumi, Deming ChenIEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS2016
190Analytical SPICE-Compatible Model of Schottky-Barrier-Type GNRFETs With Performance AnalysisMorteza Gholipour, Ying-Yu Chen, Amit Sangai, Nasser Masoumi, Deming ChenIEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS2016
191Analytical SPICE-Compatible Model of Schottky-Barrier-Type GNRFETs With Performance AnalysisMorteza Gholipour, Ying-Yu Chen, Amit Sangai, Nasser Masoumi, Deming ChenIEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS2016
192Analytical SPICE-Compatible Model of Schottky-Barrier-Type GNRFETs With Performance AnalysisMorteza Gholipour, Ying-Yu Chen, Amit Sangai, Nasser Masoumi, Deming ChenIEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS2016
193A SPICE-Compatible Model of MOS-Type Graphene Nano-Ribbon Field-Effect Transistors Enabling Gate- and Circuit-Level Delay and Power Analysis Under Process VariationYing-Yu Chen, Amit Sangai, Artem Rogachev, Morteza Gholipour, Giuseppe Iannaccone, Gianluca Fiori, Deming ChenIEEE TRANSACTIONS ON NANOTECHNOLOGY2015
194A SPICE-Compatible Model of MOS-Type Graphene Nano-Ribbon Field-Effect Transistors Enabling Gate- and Circuit-Level Delay and Power Analysis Under Process VariationYing-Yu Chen, Amit Sangai, Artem Rogachev, Morteza Gholipour, Giuseppe Iannaccone, Gianluca Fiori, Deming ChenIEEE TRANSACTIONS ON NANOTECHNOLOGY2015
195A SPICE-Compatible Model of MOS-Type Graphene Nano-Ribbon Field-Effect Transistors Enabling Gate- and Circuit-Level Delay and Power Analysis Under Process VariationYing-Yu Chen, Amit Sangai, Artem Rogachev, Morteza Gholipour, Giuseppe Iannaccone, Gianluca Fiori, Deming ChenIEEE TRANSACTIONS ON NANOTECHNOLOGY2015
196A SPICE-Compatible Model of MOS-Type Graphene Nano-Ribbon Field-Effect Transistors Enabling Gate- and Circuit-Level Delay and Power Analysis Under Process VariationYing-Yu Chen, Amit Sangai, Artem Rogachev, Morteza Gholipour, Giuseppe Iannaccone, Gianluca Fiori, Deming ChenIEEE TRANSACTIONS ON NANOTECHNOLOGY2015
197A SPICE-Compatible Model of MOS-Type Graphene Nano-Ribbon Field-Effect Transistors Enabling Gate- and Circuit-Level Delay and Power Analysis Under Process VariationYing-Yu Chen, Amit Sangai, Artem Rogachev, Morteza Gholipour, Giuseppe Iannaccone, Gianluca Fiori, Deming ChenIEEE TRANSACTIONS ON NANOTECHNOLOGY2015
198A SPICE-Compatible Model of MOS-Type Graphene Nano-Ribbon Field-Effect Transistors Enabling Gate- and Circuit-Level Delay and Power Analysis Under Process VariationYing-Yu Chen, Amit Sangai, Artem Rogachev, Morteza Gholipour, Giuseppe Iannaccone, Gianluca Fiori, Deming ChenIEEE TRANSACTIONS ON NANOTECHNOLOGY2015
199Asymmetric Gate Schottky-Barrier Graphene Nanoribbon FETs for Low-Power DesignMorteza Gholipour, Nasser Masoumi, Ying-Yu Christine Chen, Deming Chen, Mahdi PourfathIEEE TRANSACTIONS ON ELECTRON DEVICES2014
200Graphene nanoribbon crossbar architecture for low power and dense circuit implementationsMorteza Gholipour, Nasser MasoumiMICROELECTRONICS JOURNAL2014
Showing 181-200 of 216 items.