| 181 | A Compact Short-Channel Model for Symmetric Double-Gate TMDFET in Subthreshold Region | Morteza Gholipour | IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017 |
| 182 | A Compact Short-Channel Model for Symmetric Double-Gate TMDFET in Subthreshold Region | Morteza Gholipour | IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017 |
| 183 | A Compact Short-Channel Model for Symmetric Double-Gate TMDFET in Subthreshold Region | Morteza Gholipour | IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017 |
| 184 | A Compact Short-Channel Model for Symmetric Double-Gate TMDFET in Subthreshold Region | Morteza Gholipour | IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017 |
| 185 | A Compact Short-Channel Model for Symmetric Double-Gate TMDFET in Subthreshold Region | Morteza Gholipour | IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017 |
| 186 | A Compact Short-Channel Model for Symmetric Double-Gate TMDFET in Subthreshold Region | Morteza Gholipour | IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017 |
| 187 | Analytical SPICE-Compatible Model of Schottky-Barrier-Type GNRFETs With Performance Analysis | Morteza Gholipour, Ying-Yu Chen, Amit Sangai, Nasser Masoumi, Deming Chen | IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS | 2016 |
| 188 | Analytical SPICE-Compatible Model of Schottky-Barrier-Type GNRFETs With Performance Analysis | Morteza Gholipour, Ying-Yu Chen, Amit Sangai, Nasser Masoumi, Deming Chen | IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS | 2016 |
| 189 | Analytical SPICE-Compatible Model of Schottky-Barrier-Type GNRFETs With Performance Analysis | Morteza Gholipour, Ying-Yu Chen, Amit Sangai, Nasser Masoumi, Deming Chen | IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS | 2016 |
| 190 | Analytical SPICE-Compatible Model of Schottky-Barrier-Type GNRFETs With Performance Analysis | Morteza Gholipour, Ying-Yu Chen, Amit Sangai, Nasser Masoumi, Deming Chen | IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS | 2016 |
| 191 | Analytical SPICE-Compatible Model of Schottky-Barrier-Type GNRFETs With Performance Analysis | Morteza Gholipour, Ying-Yu Chen, Amit Sangai, Nasser Masoumi, Deming Chen | IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS | 2016 |
| 192 | Analytical SPICE-Compatible Model of Schottky-Barrier-Type GNRFETs With Performance Analysis | Morteza Gholipour, Ying-Yu Chen, Amit Sangai, Nasser Masoumi, Deming Chen | IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS | 2016 |
| 193 | A SPICE-Compatible Model of MOS-Type Graphene Nano-Ribbon Field-Effect Transistors Enabling Gate- and Circuit-Level Delay and Power Analysis Under Process Variation | Ying-Yu Chen, Amit Sangai, Artem Rogachev, Morteza Gholipour, Giuseppe Iannaccone, Gianluca Fiori, Deming Chen | IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2015 |
| 194 | A SPICE-Compatible Model of MOS-Type Graphene Nano-Ribbon Field-Effect Transistors Enabling Gate- and Circuit-Level Delay and Power Analysis Under Process Variation | Ying-Yu Chen, Amit Sangai, Artem Rogachev, Morteza Gholipour, Giuseppe Iannaccone, Gianluca Fiori, Deming Chen | IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2015 |
| 195 | A SPICE-Compatible Model of MOS-Type Graphene Nano-Ribbon Field-Effect Transistors Enabling Gate- and Circuit-Level Delay and Power Analysis Under Process Variation | Ying-Yu Chen, Amit Sangai, Artem Rogachev, Morteza Gholipour, Giuseppe Iannaccone, Gianluca Fiori, Deming Chen | IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2015 |
| 196 | A SPICE-Compatible Model of MOS-Type Graphene Nano-Ribbon Field-Effect Transistors Enabling Gate- and Circuit-Level Delay and Power Analysis Under Process Variation | Ying-Yu Chen, Amit Sangai, Artem Rogachev, Morteza Gholipour, Giuseppe Iannaccone, Gianluca Fiori, Deming Chen | IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2015 |
| 197 | A SPICE-Compatible Model of MOS-Type Graphene Nano-Ribbon Field-Effect Transistors Enabling Gate- and Circuit-Level Delay and Power Analysis Under Process Variation | Ying-Yu Chen, Amit Sangai, Artem Rogachev, Morteza Gholipour, Giuseppe Iannaccone, Gianluca Fiori, Deming Chen | IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2015 |
| 198 | A SPICE-Compatible Model of MOS-Type Graphene Nano-Ribbon Field-Effect Transistors Enabling Gate- and Circuit-Level Delay and Power Analysis Under Process Variation | Ying-Yu Chen, Amit Sangai, Artem Rogachev, Morteza Gholipour, Giuseppe Iannaccone, Gianluca Fiori, Deming Chen | IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2015 |
| 199 | Asymmetric Gate Schottky-Barrier Graphene Nanoribbon FETs for Low-Power Design | Morteza Gholipour, Nasser Masoumi, Ying-Yu Christine Chen, Deming Chen, Mahdi Pourfath | IEEE TRANSACTIONS ON ELECTRON DEVICES | 2014 |
| 200 | Graphene nanoribbon crossbar architecture for low power and dense circuit implementations | Morteza Gholipour, Nasser Masoumi | MICROELECTRONICS JOURNAL | 2014 |