Papers in Journals
| # | Paper Title | Authors | Journal | Published At |
|---|---|---|---|---|
| 81 | Enhanced overloaded code division multiple access for network on chip | Behnam Vakili, Morteza Gholipour | IET Computers and Digital Techniques | 2022 |
| 82 | A Single-Bitline 9T SRAM for Low-Power Near-Threshold Operation in FinFET Technology | Erfan Abbasian, Morteza Gholipour, Shilpi Birla | ARABIAN JOURNAL FOR SCIENCE AND ENGINEERING | 2022 |
| 83 | Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM | Erfan Abbasian, Shilpi Birla, Morteza Gholipour | MICROELECTRONICS JOURNAL | 2022 |
| 84 | A 9T high-stable and Low-Energy Half-Select-Free SRAM Cell Design using TMDFETs | Erfan Abbasian, Shilpi Birla, Morteza Gholipour | ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING | 2022 |
| 85 | A low-leakage single-bitline 9T SRAM cell with read-disturbance removal and high writability for low-power biomedical applications | Erfan Abbasian, Morteza Gholipour | INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS | 2022 |
| 86 | A Schmitt-Trigger-Based Low-Voltage 11 T SRAM Cell for Low-Leakage in 7-nm FinFET Technology | Erfan Abbasian, Elangovan Mani, Morteza Gholipour, Mehrzad Karamimanesh, Mohd Sahid, Adil Zaidi | CIRCUITS SYSTEMS AND SIGNAL PROCESSING | 2022 |
| 87 | Semi-analytical SPICE-compatible ballistic I-V model for 5 nm channel MoS2 FETs | Ehsan Gholinataj, Alireza Aghanejad Ahmadchally, Armin Gooran shoorakchaly, Morteza Gholipour | Journal of Computational Electronics | 2022 |
| 88 | Robust transmission gate-based 10T subthreshold SRAM for internet-of-things applications | Erfan Abbasian, Morteza Gholipour | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2022 |
| 89 | Improved read/write assist mechanism for 10-transistor static random access memory cell | Erfan Abbasian, Morteza Gholipour | INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS | 2022 |
| 90 | Design of a Highly Stable and Robust 10T SRAM Cell for Low-Power Portable Applications | Erfan Abbasian, Morteza Gholipour | CIRCUITS SYSTEMS AND SIGNAL PROCESSING | 2022 |
| 91 | Enhanced overloaded code division multiple access for network on chip | Behnam Vakili, Morteza Gholipour | IET Computers and Digital Techniques | 2022 |
| 92 | A Schmitt-Trigger-Based Low-Voltage 11 T SRAM Cell for Low-Leakage in 7-nm FinFET Technology | Erfan Abbasian, Elangovan Mani, Morteza Gholipour, Mehrzad Karamimanesh, Mohd Sahid, Adil Zaidi | CIRCUITS SYSTEMS AND SIGNAL PROCESSING | 2022 |
| 93 | A low-leakage single-bitline 9T SRAM cell with read-disturbance removal and high writability for low-power biomedical applications | Erfan Abbasian, Morteza Gholipour | INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS | 2022 |
| 94 | A 9T high-stable and Low-Energy Half-Select-Free SRAM Cell Design using TMDFETs | Erfan Abbasian, Shilpi Birla, Morteza Gholipour | ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING | 2022 |
| 95 | Enhanced overloaded code division multiple access for network on chip | Behnam Vakili, Morteza Gholipour | IET Computers and Digital Techniques | 2022 |
| 96 | Improved read/write assist mechanism for 10-transistor static random access memory cell | Erfan Abbasian, Morteza Gholipour | INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS | 2022 |
| 97 | Design of a Highly Stable and Robust 10T SRAM Cell for Low-Power Portable Applications | Erfan Abbasian, Morteza Gholipour | CIRCUITS SYSTEMS AND SIGNAL PROCESSING | 2022 |
| 98 | Robust transmission gate-based 10T subthreshold SRAM for internet-of-things applications | Erfan Abbasian, Morteza Gholipour | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2022 |
| 99 | Semi-analytical SPICE-compatible ballistic I-V model for 5 nm channel MoS2 FETs | Ehsan Gholinataj, Alireza Aghanejad Ahmadchally, Armin Gooran shoorakchaly, Morteza Gholipour | Journal of Computational Electronics | 2022 |
| 100 | Design of a Highly Stable and Robust 10T SRAM Cell for Low-Power Portable Applications | Erfan Abbasian, Morteza Gholipour | CIRCUITS SYSTEMS AND SIGNAL PROCESSING | 2022 |
Showing 81-100 of 216 items.