مقالات در نشریات
| # | عنوان مقاله | نویسندگان | نشریه | تاریخ انتشار |
|---|---|---|---|---|
| ۲۱ | Design of a Schmitt-Trigger-Based 7T SRAM cell for variation resilient Low-Energy consumption and reliable internet of things applications | Erfan Abbasian, Morteza Gholipour | AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS | 2021 |
| ۲۲ | Investigation of 6-armchair graphene nanoribbon tunnel FETs | Alireza Aghanejad Ahmadchally, Morteza Gholipour | Journal of Computational Electronics | 2021 |
| ۲۳ | Half-select disturb-free single-ended 9-transistor SRAM cell with bit-interleaving scheme in TMDFET technology | Farzaneh Izadinasab, Morteza Gholipour | MICROELECTRONICS JOURNAL | 2021 |
| ۲۴ | Design of a Low-Power Short-Channel Electrostatically Doped Silicene Nanoribbon FET | Armin Gooran shoorakchaly, Alireza Aghanejad Ahmadchally, Samaneh Soleimani-Amiri, Morteza Gholipour | IEEE TRANSACTIONS ON ELECTRON DEVICES | 2021 |
| ۲۵ | Single-ended half-select disturb-free 11T static random access memory cell for reliable and low power applications | Erfan Abbasian, Morteza Gholipour | INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS | 2021 |
| ۲۶ | A variation-aware design for storage cells using Schottky-barrier-type GNRFETs | Erfan Abbasian, Morteza Gholipour | Journal of Computational Electronics | 2020 |
| ۲۷ | Design space exploration of low-power flip-flops in FinFET technology | Ehsan Mahmoodi, Morteza Gholipour | INTEGRATION-THE VLSI JOURNAL | 2020 |
| ۲۸ | Nanoscale field effect diode (FED) with improved speed and ION/IOFF ratio | Arash Rezaei, Bahram Azizollah-Ganji, Morteza Gholipour | IET Circuits Devices and Systems | 2019 |
| ۲۹ | Effects of the Channel Length on the Nanoscale Field Effect Diode Performance | Arash Rezaei, Bahram Azizollah-Ganji, Morteza Gholipour | Journal of Optoelectronical Nanostructures | 2018 |
| ۳۰ | Compact Modeling to Device-and Circuit-Level Evaluation of Flexible TMD Field-Effect Transistors | Morteza Gholipour, Ying-Yu Chen, Deming Chen | IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 2018 |
| ۳۱ | A Compact Short-Channel Model for Symmetric Double-Gate TMDFET in Subthreshold Region | Morteza Gholipour | IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017 |
| ۳۲ | Analytical SPICE-Compatible Model of Schottky-Barrier-Type GNRFETs With Performance Analysis | Morteza Gholipour, Ying-Yu Chen, Amit Sangai, Nasser Masoumi, Deming Chen | IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS | 2016 |
| ۳۳ | A SPICE-Compatible Model of MOS-Type Graphene Nano-Ribbon Field-Effect Transistors Enabling Gate- and Circuit-Level Delay and Power Analysis Under Process Variation | Ying-Yu Chen, Amit Sangai, Artem Rogachev, Morteza Gholipour, Giuseppe Iannaccone, Gianluca Fiori, Deming Chen | IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2015 |
| ۳۴ | Asymmetric Gate Schottky-Barrier Graphene Nanoribbon FETs for Low-Power Design | Morteza Gholipour, Nasser Masoumi, Ying-Yu Christine Chen, Deming Chen, Mahdi Pourfath | IEEE TRANSACTIONS ON ELECTRON DEVICES | 2014 |
| ۳۵ | Graphene nanoribbon crossbar architecture for low power and dense circuit implementations | Morteza Gholipour, Nasser Masoumi | MICROELECTRONICS JOURNAL | 2014 |
| ۳۶ | Design investigation of nanoelectronic circuits using crossbar-based nanoarchitectures | Morteza Gholipour, Nasser Masoumi | MICROELECTRONICS JOURNAL | 2013 |
| ۳۷ | بهبود نسبت جريان روشن به خاموش Ion/Ioff در ترانزيستورهاي نانو نوار گرافني نوع شاتكي | فرزانه تقي پور درزي نقيبي, مرتضي قلي پور گشنياني, بهرام عزيزاله گنجي | مهندسي برق و مهندسي كامپيوتر ايران | 1400 |
| ۳۸ | ارزيابي كارآيي سلول حافظه SRAM مبتني بر ترانزيستورهاي TMDFET در مقايسه با فناوري Si-MOSFET | فرزانه ايزدي نسب, مرتضي قلي پور گشنياني | مهندسي برق و مهندسي كامپيوتر ايران | 1400 |
| ۳۹ | ارزيابي مشخصه فليپ فلاپ استاتيك مبتني بر ترانزيستور نانو-نوار گرافني سد شاتكي تحت تغييرات فرآيند ساخت | عرفان عباسيان, مرتضي قلي پور گشنياني | مهندسي برق و مهندسي كامپيوتر ايران | 1399 |
| ۴۰ | تحليل و بررسي تاثير پارامترهاي طراحي فليپ فلاپ استاتيك بر مشخصه هاي زماني و توان مصرفي آن در تكنولوژي 16 نانومتر | احسان محمودي, مرتضي قلي پور گشنياني | مهندسي برق و مهندسي كامپيوتر ايران | 1398 |
نمایش ۲۱ تا ۴۰ مورد از کل ۴۰ مورد.