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مرتضی قلی پور گشنیانی

مرتضی قلی پور گشنیانی

دانشیار

دانشکده: مهندسی برق و کامپیوتر

گروه: الکترونیک

رزومه
EN
مرتضی قلی پور گشنیانی

دانشیار مرتضی قلی پور گشنیانی

دانشکده: مهندسی برق و کامپیوتر - گروه: الکترونیک

مقالات در نشریات

#عنوان مقالهنویسندگاننشریهتاریخ انتشار
 
۱Efficient fully parallel convolutional neural network architecture using 1-memristor and 1-transistor (1M1T)Ahmad Reza Usefzadeh Chari, Morteza Gholipour, Mohammad Reza HassanzadehJOURNAL OF SUPERCOMPUTING2025
۲Reliable leakage-enabled memristor model for large-scale circuitsMohammad Milad Rabiee, Morteza Gholipour, Nima TaheriNejadJournal of Computational Electronics2025
۳FinFET-Based Feedback Control Assisted Near-Threshold SRAM CellBahare Geraylotanha, Morteza GholipourIETE TECHNICAL REVIEW2024
۴Optimized ternary GNRFET-based n-trit full adder with redefined operatorsMaedeh Orooji, Morteza GholipourEngineering Research Express2024
۵An energy-efficient design of ternary SRAM using GNRFETsMaedeh Orooji, Erfan Abbasian, Morteza GholipourINTERNATIONAL JOURNAL OF ELECTRONICS2024
۶Transition metal dichalcogenide FET-based dynamic random-access memoryMahdieh Raoofi, Morteza GholipourINTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS2024
۷Recent advances in photonic crystal based all-optical analog to digital converter: a reviewFariborz Parandin, Mohamadreza Jomour, Reza Kamarian, Morteza Gholipour, Naser Mahtabi, Asghar AskarianJOURNAL OF OPTICAL COMMUNICATIONS2023
۸Robust transmission gate-based 10T subthreshold SRAM for internet-of-things applicationsErfan Abbasian, Morteza GholipourSEMICONDUCTOR SCIENCE AND TECHNOLOGY2022
۹A Schmitt-Trigger-Based Low-Voltage 11 T SRAM Cell for Low-Leakage in 7-nm FinFET TechnologyErfan Abbasian, Elangovan Mani, Morteza Gholipour, Mehrzad Karamimanesh, Mohd Sahid, Adil ZaidiCIRCUITS SYSTEMS AND SIGNAL PROCESSING2022
۱۰A low-leakage single-bitline 9T SRAM cell with read-disturbance removal and high writability for low-power biomedical applicationsErfan Abbasian, Morteza GholipourINTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS2022
۱۱A 9T high-stable and Low-Energy Half-Select-Free SRAM Cell Design using TMDFETsErfan Abbasian, Shilpi Birla, Morteza GholipourANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING2022
۱۲Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAMErfan Abbasian, Shilpi Birla, Morteza GholipourMICROELECTRONICS JOURNAL2022
۱۳A Single-Bitline 9T SRAM for Low-Power Near-Threshold Operation in FinFET TechnologyErfan Abbasian, Morteza Gholipour, Shilpi BirlaARABIAN JOURNAL FOR SCIENCE AND ENGINEERING2022
۱۴Semi-analytical SPICE-compatible ballistic I-V model for 5 nm channel MoS2 FETsEhsan Gholinataj, Alireza Aghanejad Ahmadchally, Armin Gooran shoorakchaly, Morteza GholipourJournal of Computational Electronics2022
۱۵Improved read/write assist mechanism for 10-transistor static random access memory cellErfan Abbasian, Morteza GholipourINTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS2022
۱۶Design of a Highly Stable and Robust 10T SRAM Cell for Low-Power Portable ApplicationsErfan Abbasian, Morteza GholipourCIRCUITS SYSTEMS AND SIGNAL PROCESSING2022
۱۷Enhanced overloaded code division multiple access for network on chipBehnam Vakili, Morteza GholipourIET Computers and Digital Techniques2022
۱۸A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise MarginsErfan Abbasian, Farzaneh Izadinasab, Morteza GholipourIEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS2021
۱۹A Comprehensive Analysis of Different SRAM Cell Topologies in 7-nm FinFET TechnologyErfan Abbasian, Shilpi Birla, Morteza GholipourSilicon2021
۲۰Performance evaluation of GNRFET and TMDFET devices in static random access memory cells designErfan Abbasian, Morteza Gholipour, Farzaneh IzadinasabINTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS2021
نمایش ۱ تا ۲۰ مورد از کل ۴۰ مورد.