Associate Professor Morteza Gholipour
College: Electrical & Computer Engineering
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Department: Electronics
Papers in Journals
| # | Paper Title | Authors | Journal | Published At |
|---|---|---|---|---|
| 21 | Investigation of 6-armchair graphene nanoribbon tunnel FETs | Alireza Aghanejad Ahmadchally, Morteza Gholipour | Journal of Computational Electronics | 2021 |
| 22 | Half-select disturb-free single-ended 9-transistor SRAM cell with bit-interleaving scheme in TMDFET technology | Farzaneh Izadinasab, Morteza Gholipour | MICROELECTRONICS JOURNAL | 2021 |
| 23 | Design of a Low-Power Short-Channel Electrostatically Doped Silicene Nanoribbon FET | Armin Gooran shoorakchaly, Alireza Aghanejad Ahmadchally, Samaneh Soleimani-Amiri, Morteza Gholipour | IEEE TRANSACTIONS ON ELECTRON DEVICES | 2021 |
| 24 | Single-ended half-select disturb-free 11T static random access memory cell for reliable and low power applications | Erfan Abbasian, Morteza Gholipour | INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS | 2021 |
| 25 | Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design | Erfan Abbasian, Morteza Gholipour, Farzaneh Izadinasab | INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS | 2021 |
| 26 | A variation-aware design for storage cells using Schottky-barrier-type GNRFETs | Erfan Abbasian, Morteza Gholipour | Journal of Computational Electronics | 2020 |
| 27 | Design space exploration of low-power flip-flops in FinFET technology | Ehsan Mahmoodi, Morteza Gholipour | INTEGRATION-THE VLSI JOURNAL | 2020 |
| 28 | Nanoscale field effect diode (FED) with improved speed and ION/IOFF ratio | Arash Rezaei, Bahram Azizollah-Ganji, Morteza Gholipour | IET Circuits Devices and Systems | 2019 |
| 29 | Compact Modeling to Device-and Circuit-Level Evaluation of Flexible TMD Field-Effect Transistors | Morteza Gholipour, Ying-Yu Chen, Deming Chen | IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 2018 |
| 30 | Effects of the Channel Length on the Nanoscale Field Effect Diode Performance | Arash Rezaei, Bahram Azizollah-Ganji, Morteza Gholipour | Journal of Optoelectronical Nanostructures | 2018 |
| 31 | A Compact Short-Channel Model for Symmetric Double-Gate TMDFET in Subthreshold Region | Morteza Gholipour | IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017 |
| 32 | Analytical SPICE-Compatible Model of Schottky-Barrier-Type GNRFETs With Performance Analysis | Morteza Gholipour, Ying-Yu Chen, Amit Sangai, Nasser Masoumi, Deming Chen | IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS | 2016 |
| 33 | A SPICE-Compatible Model of MOS-Type Graphene Nano-Ribbon Field-Effect Transistors Enabling Gate- and Circuit-Level Delay and Power Analysis Under Process Variation | Ying-Yu Chen, Amit Sangai, Artem Rogachev, Morteza Gholipour, Giuseppe Iannaccone, Gianluca Fiori, Deming Chen | IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2015 |
| 34 | Asymmetric Gate Schottky-Barrier Graphene Nanoribbon FETs for Low-Power Design | Morteza Gholipour, Nasser Masoumi, Ying-Yu Christine Chen, Deming Chen, Mahdi Pourfath | IEEE TRANSACTIONS ON ELECTRON DEVICES | 2014 |
| 35 | Graphene nanoribbon crossbar architecture for low power and dense circuit implementations | Morteza Gholipour, Nasser Masoumi | MICROELECTRONICS JOURNAL | 2014 |
| 36 | Design investigation of nanoelectronic circuits using crossbar-based nanoarchitectures | Morteza Gholipour, Nasser Masoumi | MICROELECTRONICS JOURNAL | 2013 |
Showing 21-36 of 36 items.