CV


FA
Morteza Gholipour

Morteza Gholipour

Associate Professor

College: Electrical & Computer Engineering

Department: Electronics

CV
FA
Morteza Gholipour

Associate Professor Morteza Gholipour

College: Electrical & Computer Engineering - Department: Electronics

Papers in Journals

#Paper TitleAuthorsJournalPublished At
 
1Efficient fully parallel convolutional neural network architecture using 1-memristor and 1-transistor (1M1T)Ahmad Reza Usefzadeh Chari, Morteza Gholipour, Mohammad Reza HassanzadehJOURNAL OF SUPERCOMPUTING2025
2Reliable leakage-enabled memristor model for large-scale circuitsMohammad Milad Rabiee, Morteza Gholipour, Nima TaheriNejadJournal of Computational Electronics2025
3FinFET-Based Feedback Control Assisted Near-Threshold SRAM CellBahare Geraylotanha, Morteza GholipourIETE TECHNICAL REVIEW2024
4Optimized ternary GNRFET-based n-trit full adder with redefined operatorsMaedeh Orooji, Morteza GholipourEngineering Research Express2024
5An energy-efficient design of ternary SRAM using GNRFETsMaedeh Orooji, Erfan Abbasian, Morteza GholipourINTERNATIONAL JOURNAL OF ELECTRONICS2024
6Transition metal dichalcogenide FET-based dynamic random-access memoryMahdieh Raoofi, Morteza GholipourINTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS2024
7Recent advances in photonic crystal based all-optical analog to digital converter: a reviewFariborz Parandin, Mohamadreza Jomour, Reza Kamarian, Morteza Gholipour, Naser Mahtabi, Asghar AskarianJOURNAL OF OPTICAL COMMUNICATIONS2023
8Robust transmission gate-based 10T subthreshold SRAM for internet-of-things applicationsErfan Abbasian, Morteza GholipourSEMICONDUCTOR SCIENCE AND TECHNOLOGY2022
9A Schmitt-Trigger-Based Low-Voltage 11 T SRAM Cell for Low-Leakage in 7-nm FinFET TechnologyErfan Abbasian, Elangovan Mani, Morteza Gholipour, Mehrzad Karamimanesh, Mohd Sahid, Adil ZaidiCIRCUITS SYSTEMS AND SIGNAL PROCESSING2022
10A low-leakage single-bitline 9T SRAM cell with read-disturbance removal and high writability for low-power biomedical applicationsErfan Abbasian, Morteza GholipourINTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS2022
11A 9T high-stable and Low-Energy Half-Select-Free SRAM Cell Design using TMDFETsErfan Abbasian, Shilpi Birla, Morteza GholipourANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING2022
12Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAMErfan Abbasian, Shilpi Birla, Morteza GholipourMICROELECTRONICS JOURNAL2022
13A Single-Bitline 9T SRAM for Low-Power Near-Threshold Operation in FinFET TechnologyErfan Abbasian, Morteza Gholipour, Shilpi BirlaARABIAN JOURNAL FOR SCIENCE AND ENGINEERING2022
14Semi-analytical SPICE-compatible ballistic I-V model for 5 nm channel MoS2 FETsEhsan Gholinataj, Alireza Aghanejad Ahmadchally, Armin Gooran shoorakchaly, Morteza GholipourJournal of Computational Electronics2022
15Improved read/write assist mechanism for 10-transistor static random access memory cellErfan Abbasian, Morteza GholipourINTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS2022
16Design of a Highly Stable and Robust 10T SRAM Cell for Low-Power Portable ApplicationsErfan Abbasian, Morteza GholipourCIRCUITS SYSTEMS AND SIGNAL PROCESSING2022
17Enhanced overloaded code division multiple access for network on chipBehnam Vakili, Morteza GholipourIET Computers and Digital Techniques2022
18A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise MarginsErfan Abbasian, Farzaneh Izadinasab, Morteza GholipourIEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS2021
19A Comprehensive Analysis of Different SRAM Cell Topologies in 7-nm FinFET TechnologyErfan Abbasian, Shilpi Birla, Morteza GholipourSilicon2021
20Design of a Schmitt-Trigger-Based 7T SRAM cell for variation resilient Low-Energy consumption and reliable internet of things applicationsErfan Abbasian, Morteza GholipourAEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS2021
Showing 1-20 of 36 items.