faculty389023en

activity_title	startedAt	endedAt
VLSI Systems Design	(تنظیم نشده)	(تنظیم نشده)
Electronics II	(تنظیم نشده)	(تنظیم نشده)
Digital SystemsII	(تنظیم نشده)	(تنظیم نشده)
Quantum Electronics	(تنظیم نشده)	(تنظیم نشده)
Special PurposeProcassor Designers	(تنظیم نشده)	(تنظیم نشده)
Digital System-I Lab	(تنظیم نشده)	(تنظیم نشده)
Logic Circuits	(تنظیم نشده)	(تنظیم نشده)
Advanced Digital Electronics	(تنظیم نشده)	(تنظیم نشده)
Computer Architecture	(تنظیم نشده)	(تنظیم نشده)
Nano-Electronics	(تنظیم نشده)	(تنظیم نشده)
Very Large Scale Integrated Circuits (VLSI)	(تنظیم نشده)	(تنظیم نشده)
Advanced VLSI design	(تنظیم نشده)	(تنظیم نشده)
Architecture, of Custom Digtal Signal Processors	(تنظیم نشده)	(تنظیم نشده)
Advanced VLSI Systems Design	(تنظیم نشده)	(تنظیم نشده)

activity_title	startedAt	endedAt
Reviewer of Microelectronics Reliability Journal	01 January 2022	(تنظیم نشده)
Reviewer of IEEE Transactions on Aerospace and Electronic Systems	01 January 2024	(تنظیم نشده)
Reviewer of IEEE Transactions on Circuits and Systems I: Regular Papers	01 January 2024	(تنظیم نشده)
Reviewer of AEU - International Journal of Electronics and Communications	01 January 2025	(تنظیم نشده)
Reviewer of IEEE Transactions on Electron Devices (TED)	01 January 2025	(تنظیم نشده)
Reviewer of IEEE Transactions on Nanotechnology (TNANO)	01 January 2025	(تنظیم نشده)
Reviewer of International Journal Of Electronics Letters	01 January 2025	(تنظیم نشده)
Reviewer of IEEE Transactions on Aerospace and Electronic Systems (TAES)	01 January 2025	(تنظیم نشده)
Reviewer of Integration the VLSI Journal	01 January 2025	(تنظیم نشده)
Reviewer of Journal of Computational Electronics	01 January 2025	(تنظیم نشده)
Reviewer of IEEE Transactions on Circuits and Systems I: Regular Papers (TCAS)	01 January 2025	(تنظیم نشده)
Reviewer of Springer Nature-Discover Nano	01 January 2025	(تنظیم نشده)
Reviewer of Microelectronics Journal	01 January 2017	(تنظیم نشده)
Reviewer of IET Circuits, Devices & Systems	01 January 2017	(تنظیم نشده)
Reviewer of IEEE Transactions on Computer Aided Design (TCAD)	01 January 2016	(تنظیم نشده)
Reviewer of IEEE Transactions on Very Large Scale Integration Systems (TVLSI)	01 January 2017	(تنظیم نشده)
Reviewer of Microelectronics Reliability Journal	01 January 2022	(تنظیم نشده)
Reviewer of IEEE Transactions on Aerospace and Electronic Systems	01 January 2024	(تنظیم نشده)
Reviewer of IEEE Transactions on Circuits and Systems I: Regular Papers	01 January 2024	(تنظیم نشده)
Reviewer of AEU - International Journal of Electronics and Communications	01 January 2025	(تنظیم نشده)

Papers in Journals

1. Mohammad Milad Rabiee, Morteza Gholipour, Nima TaheriNejad،Reliable leakage-enabled memristor model for large-scale circuits،Journal of Computational Electronics،2025.
2. Ahmad Reza Usefzadeh Chari, Morteza Gholipour, Mohammad Reza Hassanzadeh،Efficient fully parallel convolutional neural network architecture using 1-memristor and 1-transistor (1M1T)،JOURNAL OF SUPERCOMPUTING،2025.
3. Mohammad Milad Rabiee, Morteza Gholipour, Nima TaheriNejad،Reliable leakage-enabled memristor model for large-scale circuits،Journal of Computational Electronics،2025.
4. Ahmad Reza Usefzadeh Chari, Morteza Gholipour, Mohammad Reza Hassanzadeh،Efficient fully parallel convolutional neural network architecture using 1-memristor and 1-transistor (1M1T)،JOURNAL OF SUPERCOMPUTING،2025.
5. Mohammad Milad Rabiee, Morteza Gholipour, Nima TaheriNejad،Reliable leakage-enabled memristor model for large-scale circuits،Journal of Computational Electronics،2025.
6. Ahmad Reza Usefzadeh Chari, Morteza Gholipour, Mohammad Reza Hassanzadeh،Efficient fully parallel convolutional neural network architecture using 1-memristor and 1-transistor (1M1T)،JOURNAL OF SUPERCOMPUTING،2025.
7. Mohammad Milad Rabiee, Morteza Gholipour, Nima TaheriNejad،Reliable leakage-enabled memristor model for large-scale circuits،Journal of Computational Electronics،2025.
8. Ahmad Reza Usefzadeh Chari, Morteza Gholipour, Mohammad Reza Hassanzadeh،Efficient fully parallel convolutional neural network architecture using 1-memristor and 1-transistor (1M1T)،JOURNAL OF SUPERCOMPUTING،2025.
9. Mohammad Milad Rabiee, Morteza Gholipour, Nima TaheriNejad،Reliable leakage-enabled memristor model for large-scale circuits،Journal of Computational Electronics،2025.
10. Ahmad Reza Usefzadeh Chari, Morteza Gholipour, Mohammad Reza Hassanzadeh،Efficient fully parallel convolutional neural network architecture using 1-memristor and 1-transistor (1M1T)،JOURNAL OF SUPERCOMPUTING،2025.
11. Mohammad Milad Rabiee, Morteza Gholipour, Nima TaheriNejad،Reliable leakage-enabled memristor model for large-scale circuits،Journal of Computational Electronics،2025.
12. Ahmad Reza Usefzadeh Chari, Morteza Gholipour, Mohammad Reza Hassanzadeh،Efficient fully parallel convolutional neural network architecture using 1-memristor and 1-transistor (1M1T)،JOURNAL OF SUPERCOMPUTING،2025.
13. Mahdieh Raoofi, Morteza Gholipour،Transition metal dichalcogenide FET-based dynamic random-access memory،INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS،2024.
14. Bahare Geraylotanha, Morteza Gholipour،FinFET-Based Feedback Control Assisted Near-Threshold SRAM Cell،IETE TECHNICAL REVIEW،2024.
15. Maedeh Orooji, Morteza Gholipour،Optimized ternary GNRFET-based n-trit full adder with redefined operators،Engineering Research Express،2024.
16. Maedeh Orooji, Erfan Abbasian, Morteza Gholipour،An energy-efficient design of ternary SRAM using GNRFETs،INTERNATIONAL JOURNAL OF ELECTRONICS،2024.
17. Mahdieh Raoofi, Morteza Gholipour،Transition metal dichalcogenide FET-based dynamic random-access memory،INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS،2024.
18. Bahare Geraylotanha, Morteza Gholipour،FinFET-Based Feedback Control Assisted Near-Threshold SRAM Cell،IETE TECHNICAL REVIEW،2024.
19. Maedeh Orooji, Morteza Gholipour،Optimized ternary GNRFET-based n-trit full adder with redefined operators،Engineering Research Express،2024.
20. Maedeh Orooji, Erfan Abbasian, Morteza Gholipour،An energy-efficient design of ternary SRAM using GNRFETs،INTERNATIONAL JOURNAL OF ELECTRONICS،2024.
21. Mahdieh Raoofi, Morteza Gholipour،Transition metal dichalcogenide FET-based dynamic random-access memory،INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS،2024.
22. Bahare Geraylotanha, Morteza Gholipour،FinFET-Based Feedback Control Assisted Near-Threshold SRAM Cell،IETE TECHNICAL REVIEW،2024.
23. Maedeh Orooji, Morteza Gholipour،Optimized ternary GNRFET-based n-trit full adder with redefined operators،Engineering Research Express،2024.
24. Maedeh Orooji, Erfan Abbasian, Morteza Gholipour،An energy-efficient design of ternary SRAM using GNRFETs،INTERNATIONAL JOURNAL OF ELECTRONICS،2024.
25. Mahdieh Raoofi, Morteza Gholipour،Transition metal dichalcogenide FET-based dynamic random-access memory،INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS،2024.
26. Bahare Geraylotanha, Morteza Gholipour،FinFET-Based Feedback Control Assisted Near-Threshold SRAM Cell،IETE TECHNICAL REVIEW،2024.
27. Maedeh Orooji, Morteza Gholipour،Optimized ternary GNRFET-based n-trit full adder with redefined operators،Engineering Research Express،2024.
28. Maedeh Orooji, Erfan Abbasian, Morteza Gholipour،An energy-efficient design of ternary SRAM using GNRFETs،INTERNATIONAL JOURNAL OF ELECTRONICS،2024.
29. Mahdieh Raoofi, Morteza Gholipour،Transition metal dichalcogenide FET-based dynamic random-access memory،INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS،2024.
30. Bahare Geraylotanha, Morteza Gholipour،FinFET-Based Feedback Control Assisted Near-Threshold SRAM Cell،IETE TECHNICAL REVIEW،2024.
31. Maedeh Orooji, Morteza Gholipour،Optimized ternary GNRFET-based n-trit full adder with redefined operators،Engineering Research Express،2024.
32. Maedeh Orooji, Erfan Abbasian, Morteza Gholipour،An energy-efficient design of ternary SRAM using GNRFETs،INTERNATIONAL JOURNAL OF ELECTRONICS،2024.
33. Mahdieh Raoofi, Morteza Gholipour،Transition metal dichalcogenide FET-based dynamic random-access memory،INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS،2024.
34. Bahare Geraylotanha, Morteza Gholipour،FinFET-Based Feedback Control Assisted Near-Threshold SRAM Cell،IETE TECHNICAL REVIEW،2024.
35. Maedeh Orooji, Morteza Gholipour،Optimized ternary GNRFET-based n-trit full adder with redefined operators،Engineering Research Express،2024.
36. Maedeh Orooji, Erfan Abbasian, Morteza Gholipour،An energy-efficient design of ternary SRAM using GNRFETs،INTERNATIONAL JOURNAL OF ELECTRONICS،2024.
37. Fariborz Parandin, Mohamadreza Jomour, Reza Kamarian, Morteza Gholipour, Naser Mahtabi, Asghar Askarian،Recent advances in photonic crystal based all-optical analog to digital converter: a review،JOURNAL OF OPTICAL COMMUNICATIONS،2023.
38. Fariborz Parandin, Mohamadreza Jomour, Reza Kamarian, Morteza Gholipour, Naser Mahtabi, Asghar Askarian،Recent advances in photonic crystal based all-optical analog to digital converter: a review،JOURNAL OF OPTICAL COMMUNICATIONS،2023.
39. Fariborz Parandin, Mohamadreza Jomour, Reza Kamarian, Morteza Gholipour, Naser Mahtabi, Asghar Askarian،Recent advances in photonic crystal based all-optical analog to digital converter: a review،JOURNAL OF OPTICAL COMMUNICATIONS،2023.
40. Fariborz Parandin, Mohamadreza Jomour, Reza Kamarian, Morteza Gholipour, Naser Mahtabi, Asghar Askarian،Recent advances in photonic crystal based all-optical analog to digital converter: a review،JOURNAL OF OPTICAL COMMUNICATIONS،2023.
41. Fariborz Parandin, Mohamadreza Jomour, Reza Kamarian, Morteza Gholipour, Naser Mahtabi, Asghar Askarian،Recent advances in photonic crystal based all-optical analog to digital converter: a review،JOURNAL OF OPTICAL COMMUNICATIONS،2023.
42. Fariborz Parandin, Mohamadreza Jomour, Reza Kamarian, Morteza Gholipour, Naser Mahtabi, Asghar Askarian،Recent advances in photonic crystal based all-optical analog to digital converter: a review،JOURNAL OF OPTICAL COMMUNICATIONS،2023.
43. Behnam Vakili, Morteza Gholipour،Enhanced overloaded code division multiple access for network on chip،IET Computers and Digital Techniques،2022.
44. Erfan Abbasian, Morteza Gholipour،Design of a Highly Stable and Robust 10T SRAM Cell for Low-Power Portable Applications،CIRCUITS SYSTEMS AND SIGNAL PROCESSING،2022.
45. Erfan Abbasian, Morteza Gholipour،Improved read/write assist mechanism for 10-transistor static random access memory cell،INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS،2022.
46. Erfan Abbasian, Morteza Gholipour،Robust transmission gate-based 10T subthreshold SRAM for internet-of-things applications،SEMICONDUCTOR SCIENCE AND TECHNOLOGY،2022.
47. Ehsan Gholinataj, Alireza Aghanejad Ahmadchally, Armin Gooran shoorakchaly, Morteza Gholipour،Semi-analytical SPICE-compatible ballistic I-V model for 5 nm channel MoS2 FETs،Journal of Computational Electronics،2022.
48. Erfan Abbasian, Elangovan Mani, Morteza Gholipour, Mehrzad Karamimanesh, Mohd Sahid, Adil Zaidi،A Schmitt-Trigger-Based Low-Voltage 11 T SRAM Cell for Low-Leakage in 7-nm FinFET Technology،CIRCUITS SYSTEMS AND SIGNAL PROCESSING،2022.
49. Erfan Abbasian, Morteza Gholipour،A low-leakage single-bitline 9T SRAM cell with read-disturbance removal and high writability for low-power biomedical applications،INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS،2022.
50. Erfan Abbasian, Shilpi Birla, Morteza Gholipour،A 9T high-stable and Low-Energy Half-Select-Free SRAM Cell Design using TMDFETs،ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING،2022.
51. Erfan Abbasian, Shilpi Birla, Morteza Gholipour،Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM،MICROELECTRONICS JOURNAL،2022.
52. Erfan Abbasian, Morteza Gholipour, Shilpi Birla،A Single-Bitline 9T SRAM for Low-Power Near-Threshold Operation in FinFET Technology،ARABIAN JOURNAL FOR SCIENCE AND ENGINEERING،2022.
53. Behnam Vakili, Morteza Gholipour،Enhanced overloaded code division multiple access for network on chip،IET Computers and Digital Techniques،2022.
54. Erfan Abbasian, Morteza Gholipour،Design of a Highly Stable and Robust 10T SRAM Cell for Low-Power Portable Applications،CIRCUITS SYSTEMS AND SIGNAL PROCESSING،2022.
55. Erfan Abbasian, Morteza Gholipour،Improved read/write assist mechanism for 10-transistor static random access memory cell،INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS،2022.
56. Erfan Abbasian, Morteza Gholipour،Robust transmission gate-based 10T subthreshold SRAM for internet-of-things applications،SEMICONDUCTOR SCIENCE AND TECHNOLOGY،2022.
57. Ehsan Gholinataj, Alireza Aghanejad Ahmadchally, Armin Gooran shoorakchaly, Morteza Gholipour،Semi-analytical SPICE-compatible ballistic I-V model for 5 nm channel MoS2 FETs،Journal of Computational Electronics،2022.
58. Erfan Abbasian, Elangovan Mani, Morteza Gholipour, Mehrzad Karamimanesh, Mohd Sahid, Adil Zaidi،A Schmitt-Trigger-Based Low-Voltage 11 T SRAM Cell for Low-Leakage in 7-nm FinFET Technology،CIRCUITS SYSTEMS AND SIGNAL PROCESSING،2022.
59. Erfan Abbasian, Morteza Gholipour،A low-leakage single-bitline 9T SRAM cell with read-disturbance removal and high writability for low-power biomedical applications،INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS،2022.
60. Erfan Abbasian, Shilpi Birla, Morteza Gholipour،A 9T high-stable and Low-Energy Half-Select-Free SRAM Cell Design using TMDFETs،ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING،2022.
61. Erfan Abbasian, Shilpi Birla, Morteza Gholipour،Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM،MICROELECTRONICS JOURNAL،2022.
62. Erfan Abbasian, Morteza Gholipour, Shilpi Birla،A Single-Bitline 9T SRAM for Low-Power Near-Threshold Operation in FinFET Technology،ARABIAN JOURNAL FOR SCIENCE AND ENGINEERING،2022.
63. Behnam Vakili, Morteza Gholipour،Enhanced overloaded code division multiple access for network on chip،IET Computers and Digital Techniques،2022.
64. Erfan Abbasian, Morteza Gholipour،Design of a Highly Stable and Robust 10T SRAM Cell for Low-Power Portable Applications،CIRCUITS SYSTEMS AND SIGNAL PROCESSING،2022.
65. Erfan Abbasian, Morteza Gholipour،Improved read/write assist mechanism for 10-transistor static random access memory cell،INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS،2022.
66. Erfan Abbasian, Morteza Gholipour،Robust transmission gate-based 10T subthreshold SRAM for internet-of-things applications،SEMICONDUCTOR SCIENCE AND TECHNOLOGY،2022.
67. Ehsan Gholinataj, Alireza Aghanejad Ahmadchally, Armin Gooran shoorakchaly, Morteza Gholipour،Semi-analytical SPICE-compatible ballistic I-V model for 5 nm channel MoS2 FETs،Journal of Computational Electronics،2022.
68. Erfan Abbasian, Elangovan Mani, Morteza Gholipour, Mehrzad Karamimanesh, Mohd Sahid, Adil Zaidi،A Schmitt-Trigger-Based Low-Voltage 11 T SRAM Cell for Low-Leakage in 7-nm FinFET Technology،CIRCUITS SYSTEMS AND SIGNAL PROCESSING،2022.
69. Erfan Abbasian, Morteza Gholipour،A low-leakage single-bitline 9T SRAM cell with read-disturbance removal and high writability for low-power biomedical applications،INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS،2022.
70. Erfan Abbasian, Shilpi Birla, Morteza Gholipour،A 9T high-stable and Low-Energy Half-Select-Free SRAM Cell Design using TMDFETs،ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING،2022.
71. Erfan Abbasian, Shilpi Birla, Morteza Gholipour،Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM،MICROELECTRONICS JOURNAL،2022.
72. Erfan Abbasian, Morteza Gholipour, Shilpi Birla،A Single-Bitline 9T SRAM for Low-Power Near-Threshold Operation in FinFET Technology،ARABIAN JOURNAL FOR SCIENCE AND ENGINEERING،2022.
73. Behnam Vakili, Morteza Gholipour،Enhanced overloaded code division multiple access for network on chip،IET Computers and Digital Techniques،2022.
74. Erfan Abbasian, Morteza Gholipour،Design of a Highly Stable and Robust 10T SRAM Cell for Low-Power Portable Applications،CIRCUITS SYSTEMS AND SIGNAL PROCESSING،2022.
75. Erfan Abbasian, Morteza Gholipour،Improved read/write assist mechanism for 10-transistor static random access memory cell،INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS،2022.
76. Erfan Abbasian, Morteza Gholipour،Robust transmission gate-based 10T subthreshold SRAM for internet-of-things applications،SEMICONDUCTOR SCIENCE AND TECHNOLOGY،2022.
77. Ehsan Gholinataj, Alireza Aghanejad Ahmadchally, Armin Gooran shoorakchaly, Morteza Gholipour،Semi-analytical SPICE-compatible ballistic I-V model for 5 nm channel MoS2 FETs،Journal of Computational Electronics،2022.
78. Erfan Abbasian, Elangovan Mani, Morteza Gholipour, Mehrzad Karamimanesh, Mohd Sahid, Adil Zaidi،A Schmitt-Trigger-Based Low-Voltage 11 T SRAM Cell for Low-Leakage in 7-nm FinFET Technology،CIRCUITS SYSTEMS AND SIGNAL PROCESSING،2022.
79. Erfan Abbasian, Morteza Gholipour،A low-leakage single-bitline 9T SRAM cell with read-disturbance removal and high writability for low-power biomedical applications،INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS،2022.
80. Erfan Abbasian, Shilpi Birla, Morteza Gholipour،A 9T high-stable and Low-Energy Half-Select-Free SRAM Cell Design using TMDFETs،ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING،2022.
81. Erfan Abbasian, Shilpi Birla, Morteza Gholipour،Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM،MICROELECTRONICS JOURNAL،2022.
82. Erfan Abbasian, Morteza Gholipour, Shilpi Birla،A Single-Bitline 9T SRAM for Low-Power Near-Threshold Operation in FinFET Technology،ARABIAN JOURNAL FOR SCIENCE AND ENGINEERING،2022.
83. Behnam Vakili, Morteza Gholipour،Enhanced overloaded code division multiple access for network on chip،IET Computers and Digital Techniques،2022.
84. Erfan Abbasian, Morteza Gholipour،Design of a Highly Stable and Robust 10T SRAM Cell for Low-Power Portable Applications،CIRCUITS SYSTEMS AND SIGNAL PROCESSING،2022.
85. Erfan Abbasian, Morteza Gholipour،Improved read/write assist mechanism for 10-transistor static random access memory cell،INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS،2022.
86. Erfan Abbasian, Morteza Gholipour،Robust transmission gate-based 10T subthreshold SRAM for internet-of-things applications،SEMICONDUCTOR SCIENCE AND TECHNOLOGY،2022.
87. Ehsan Gholinataj, Alireza Aghanejad Ahmadchally, Armin Gooran shoorakchaly, Morteza Gholipour،Semi-analytical SPICE-compatible ballistic I-V model for 5 nm channel MoS2 FETs،Journal of Computational Electronics،2022.
88. Erfan Abbasian, Elangovan Mani, Morteza Gholipour, Mehrzad Karamimanesh, Mohd Sahid, Adil Zaidi،A Schmitt-Trigger-Based Low-Voltage 11 T SRAM Cell for Low-Leakage in 7-nm FinFET Technology،CIRCUITS SYSTEMS AND SIGNAL PROCESSING،2022.
89. Erfan Abbasian, Morteza Gholipour،A low-leakage single-bitline 9T SRAM cell with read-disturbance removal and high writability for low-power biomedical applications،INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS،2022.
90. Erfan Abbasian, Shilpi Birla, Morteza Gholipour،A 9T high-stable and Low-Energy Half-Select-Free SRAM Cell Design using TMDFETs،ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING،2022.
91. Erfan Abbasian, Shilpi Birla, Morteza Gholipour،Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM،MICROELECTRONICS JOURNAL،2022.
92. Erfan Abbasian, Morteza Gholipour, Shilpi Birla،A Single-Bitline 9T SRAM for Low-Power Near-Threshold Operation in FinFET Technology،ARABIAN JOURNAL FOR SCIENCE AND ENGINEERING،2022.
93. Behnam Vakili, Morteza Gholipour،Enhanced overloaded code division multiple access for network on chip،IET Computers and Digital Techniques،2022.
94. Erfan Abbasian, Morteza Gholipour،Design of a Highly Stable and Robust 10T SRAM Cell for Low-Power Portable Applications،CIRCUITS SYSTEMS AND SIGNAL PROCESSING،2022.
95. Erfan Abbasian, Morteza Gholipour،Improved read/write assist mechanism for 10-transistor static random access memory cell،INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS،2022.
96. Erfan Abbasian, Morteza Gholipour،Robust transmission gate-based 10T subthreshold SRAM for internet-of-things applications،SEMICONDUCTOR SCIENCE AND TECHNOLOGY،2022.
97. Ehsan Gholinataj, Alireza Aghanejad Ahmadchally, Armin Gooran shoorakchaly, Morteza Gholipour،Semi-analytical SPICE-compatible ballistic I-V model for 5 nm channel MoS2 FETs،Journal of Computational Electronics،2022.
98. Erfan Abbasian, Elangovan Mani, Morteza Gholipour, Mehrzad Karamimanesh, Mohd Sahid, Adil Zaidi،A Schmitt-Trigger-Based Low-Voltage 11 T SRAM Cell for Low-Leakage in 7-nm FinFET Technology،CIRCUITS SYSTEMS AND SIGNAL PROCESSING،2022.
99. Erfan Abbasian, Morteza Gholipour،A low-leakage single-bitline 9T SRAM cell with read-disturbance removal and high writability for low-power biomedical applications،INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS،2022.
100. Erfan Abbasian, Shilpi Birla, Morteza Gholipour،A 9T high-stable and Low-Energy Half-Select-Free SRAM Cell Design using TMDFETs،ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING،2022.
101. Erfan Abbasian, Shilpi Birla, Morteza Gholipour،Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM،MICROELECTRONICS JOURNAL،2022.
102. Erfan Abbasian, Morteza Gholipour, Shilpi Birla،A Single-Bitline 9T SRAM for Low-Power Near-Threshold Operation in FinFET Technology،ARABIAN JOURNAL FOR SCIENCE AND ENGINEERING،2022.
103. Erfan Abbasian, Morteza Gholipour،Single-ended half-select disturb-free 11T static random access memory cell for reliable and low power applications،INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS،2021.
104. Armin Gooran shoorakchaly, Alireza Aghanejad Ahmadchally, Samaneh Soleimani و Amiri, Morteza Gholipour،Design of a Low-Power Short-Channel Electrostatically Doped Silicene Nanoribbon FET،IEEE TRANSACTIONS ON ELECTRON DEVICES،2021.
105. Farzaneh Izadinasab, Morteza Gholipour،Half-select disturb-free single-ended 9-transistor SRAM cell with bit-interleaving scheme in TMDFET technology،MICROELECTRONICS JOURNAL،2021.
106. Alireza Aghanejad Ahmadchally, Morteza Gholipour،Investigation of 6-armchair graphene nanoribbon tunnel FETs،Journal of Computational Electronics،2021.
107. Erfan Abbasian, Morteza Gholipour،Design of a Schmitt-Trigger-Based 7T SRAM cell for variation resilient Low-Energy consumption and reliable internet of things applications،AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS،2021.
108. Erfan Abbasian, Morteza Gholipour, Farzaneh Izadinasab،Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design،INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS،2021.
109. Erfan Abbasian, Shilpi Birla, Morteza Gholipour،A Comprehensive Analysis of Different SRAM Cell Topologies in 7-nm FinFET Technology،Silicon،2021.
110. Erfan Abbasian, Farzaneh Izadinasab, Morteza Gholipour،A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise Margins،IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS،2021.
111. Erfan Abbasian, Morteza Gholipour،Single-ended half-select disturb-free 11T static random access memory cell for reliable and low power applications،INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS،2021.
112. Armin Gooran shoorakchaly, Alireza Aghanejad Ahmadchally, Samaneh Soleimani و Amiri, Morteza Gholipour،Design of a Low-Power Short-Channel Electrostatically Doped Silicene Nanoribbon FET،IEEE TRANSACTIONS ON ELECTRON DEVICES،2021.
113. Farzaneh Izadinasab, Morteza Gholipour،Half-select disturb-free single-ended 9-transistor SRAM cell with bit-interleaving scheme in TMDFET technology،MICROELECTRONICS JOURNAL،2021.
114. Alireza Aghanejad Ahmadchally, Morteza Gholipour،Investigation of 6-armchair graphene nanoribbon tunnel FETs،Journal of Computational Electronics،2021.
115. Erfan Abbasian, Morteza Gholipour،Design of a Schmitt-Trigger-Based 7T SRAM cell for variation resilient Low-Energy consumption and reliable internet of things applications،AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS،2021.
116. Erfan Abbasian, Morteza Gholipour, Farzaneh Izadinasab،Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design،INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS،2021.
117. Erfan Abbasian, Shilpi Birla, Morteza Gholipour،A Comprehensive Analysis of Different SRAM Cell Topologies in 7-nm FinFET Technology،Silicon،2021.
118. Erfan Abbasian, Farzaneh Izadinasab, Morteza Gholipour،A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise Margins،IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS،2021.
119. Erfan Abbasian, Morteza Gholipour،Single-ended half-select disturb-free 11T static random access memory cell for reliable and low power applications،INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS،2021.
120. Armin Gooran shoorakchaly, Alireza Aghanejad Ahmadchally, Samaneh Soleimani و Amiri, Morteza Gholipour،Design of a Low-Power Short-Channel Electrostatically Doped Silicene Nanoribbon FET،IEEE TRANSACTIONS ON ELECTRON DEVICES،2021.
121. Farzaneh Izadinasab, Morteza Gholipour،Half-select disturb-free single-ended 9-transistor SRAM cell with bit-interleaving scheme in TMDFET technology،MICROELECTRONICS JOURNAL،2021.
122. Alireza Aghanejad Ahmadchally, Morteza Gholipour،Investigation of 6-armchair graphene nanoribbon tunnel FETs،Journal of Computational Electronics،2021.
123. Erfan Abbasian, Morteza Gholipour،Design of a Schmitt-Trigger-Based 7T SRAM cell for variation resilient Low-Energy consumption and reliable internet of things applications،AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS،2021.
124. Erfan Abbasian, Morteza Gholipour, Farzaneh Izadinasab،Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design،INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS،2021.
125. Erfan Abbasian, Shilpi Birla, Morteza Gholipour،A Comprehensive Analysis of Different SRAM Cell Topologies in 7-nm FinFET Technology،Silicon،2021.
126. Erfan Abbasian, Farzaneh Izadinasab, Morteza Gholipour،A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise Margins،IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS،2021.
127. Erfan Abbasian, Morteza Gholipour،Single-ended half-select disturb-free 11T static random access memory cell for reliable and low power applications،INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS،2021.
128. Armin Gooran shoorakchaly, Alireza Aghanejad Ahmadchally, Samaneh Soleimani و Amiri, Morteza Gholipour،Design of a Low-Power Short-Channel Electrostatically Doped Silicene Nanoribbon FET،IEEE TRANSACTIONS ON ELECTRON DEVICES،2021.
129. Farzaneh Izadinasab, Morteza Gholipour،Half-select disturb-free single-ended 9-transistor SRAM cell with bit-interleaving scheme in TMDFET technology،MICROELECTRONICS JOURNAL،2021.
130. Alireza Aghanejad Ahmadchally, Morteza Gholipour،Investigation of 6-armchair graphene nanoribbon tunnel FETs،Journal of Computational Electronics،2021.
131. Erfan Abbasian, Morteza Gholipour،Design of a Schmitt-Trigger-Based 7T SRAM cell for variation resilient Low-Energy consumption and reliable internet of things applications،AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS،2021.
132. Erfan Abbasian, Morteza Gholipour, Farzaneh Izadinasab،Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design،INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS،2021.
133. Erfan Abbasian, Shilpi Birla, Morteza Gholipour،A Comprehensive Analysis of Different SRAM Cell Topologies in 7-nm FinFET Technology،Silicon،2021.
134. Erfan Abbasian, Farzaneh Izadinasab, Morteza Gholipour،A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise Margins،IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS،2021.
135. Erfan Abbasian, Morteza Gholipour،Single-ended half-select disturb-free 11T static random access memory cell for reliable and low power applications،INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS،2021.
136. Armin Gooran shoorakchaly, Alireza Aghanejad Ahmadchally, Samaneh Soleimani و Amiri, Morteza Gholipour،Design of a Low-Power Short-Channel Electrostatically Doped Silicene Nanoribbon FET،IEEE TRANSACTIONS ON ELECTRON DEVICES،2021.
137. Farzaneh Izadinasab, Morteza Gholipour،Half-select disturb-free single-ended 9-transistor SRAM cell with bit-interleaving scheme in TMDFET technology،MICROELECTRONICS JOURNAL،2021.
138. Alireza Aghanejad Ahmadchally, Morteza Gholipour،Investigation of 6-armchair graphene nanoribbon tunnel FETs،Journal of Computational Electronics،2021.
139. Erfan Abbasian, Morteza Gholipour،Design of a Schmitt-Trigger-Based 7T SRAM cell for variation resilient Low-Energy consumption and reliable internet of things applications،AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS،2021.
140. Erfan Abbasian, Morteza Gholipour, Farzaneh Izadinasab،Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design،INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS،2021.
141. Erfan Abbasian, Shilpi Birla, Morteza Gholipour،A Comprehensive Analysis of Different SRAM Cell Topologies in 7-nm FinFET Technology،Silicon،2021.
142. Erfan Abbasian, Farzaneh Izadinasab, Morteza Gholipour،A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise Margins،IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS،2021.
143. Erfan Abbasian, Morteza Gholipour،Single-ended half-select disturb-free 11T static random access memory cell for reliable and low power applications،INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS،2021.
144. Armin Gooran shoorakchaly, Alireza Aghanejad Ahmadchally, Samaneh Soleimani و Amiri, Morteza Gholipour،Design of a Low-Power Short-Channel Electrostatically Doped Silicene Nanoribbon FET،IEEE TRANSACTIONS ON ELECTRON DEVICES،2021.
145. Farzaneh Izadinasab, Morteza Gholipour،Half-select disturb-free single-ended 9-transistor SRAM cell with bit-interleaving scheme in TMDFET technology،MICROELECTRONICS JOURNAL،2021.
146. Alireza Aghanejad Ahmadchally, Morteza Gholipour،Investigation of 6-armchair graphene nanoribbon tunnel FETs،Journal of Computational Electronics،2021.
147. Erfan Abbasian, Morteza Gholipour،Design of a Schmitt-Trigger-Based 7T SRAM cell for variation resilient Low-Energy consumption and reliable internet of things applications،AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS،2021.
148. Erfan Abbasian, Morteza Gholipour, Farzaneh Izadinasab،Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design،INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS،2021.
149. Erfan Abbasian, Shilpi Birla, Morteza Gholipour،A Comprehensive Analysis of Different SRAM Cell Topologies in 7-nm FinFET Technology،Silicon،2021.
150. Erfan Abbasian, Farzaneh Izadinasab, Morteza Gholipour،A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise Margins،IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS،2021.
151. Erfan Abbasian, Morteza Gholipour،A variation-aware design for storage cells using Schottky-barrier-type GNRFETs،Journal of Computational Electronics،2020.
152. Ehsan Mahmoodi, Morteza Gholipour،Design space exploration of low-power flip-flops in FinFET technology،INTEGRATION-THE VLSI JOURNAL،2020.
153. Erfan Abbasian, Morteza Gholipour،A variation-aware design for storage cells using Schottky-barrier-type GNRFETs،Journal of Computational Electronics،2020.
154. Ehsan Mahmoodi, Morteza Gholipour،Design space exploration of low-power flip-flops in FinFET technology،INTEGRATION-THE VLSI JOURNAL،2020.
155. Erfan Abbasian, Morteza Gholipour،A variation-aware design for storage cells using Schottky-barrier-type GNRFETs،Journal of Computational Electronics،2020.
156. Ehsan Mahmoodi, Morteza Gholipour،Design space exploration of low-power flip-flops in FinFET technology،INTEGRATION-THE VLSI JOURNAL،2020.
157. Erfan Abbasian, Morteza Gholipour،A variation-aware design for storage cells using Schottky-barrier-type GNRFETs،Journal of Computational Electronics،2020.
158. Ehsan Mahmoodi, Morteza Gholipour،Design space exploration of low-power flip-flops in FinFET technology،INTEGRATION-THE VLSI JOURNAL،2020.
159. Erfan Abbasian, Morteza Gholipour،A variation-aware design for storage cells using Schottky-barrier-type GNRFETs،Journal of Computational Electronics،2020.
160. Ehsan Mahmoodi, Morteza Gholipour،Design space exploration of low-power flip-flops in FinFET technology،INTEGRATION-THE VLSI JOURNAL،2020.
161. Erfan Abbasian, Morteza Gholipour،A variation-aware design for storage cells using Schottky-barrier-type GNRFETs،Journal of Computational Electronics،2020.
162. Ehsan Mahmoodi, Morteza Gholipour،Design space exploration of low-power flip-flops in FinFET technology،INTEGRATION-THE VLSI JOURNAL،2020.
163. Arash Rezaei, Bahram Azizollah و Ganji, Morteza Gholipour،Nanoscale field effect diode (FED) with improved speed and ION/IOFF ratio،IET Circuits Devices and Systems،2019.
164. Arash Rezaei, Bahram Azizollah و Ganji, Morteza Gholipour،Nanoscale field effect diode (FED) with improved speed and ION/IOFF ratio،IET Circuits Devices and Systems،2019.
165. Arash Rezaei, Bahram Azizollah و Ganji, Morteza Gholipour،Nanoscale field effect diode (FED) with improved speed and ION/IOFF ratio،IET Circuits Devices and Systems،2019.
166. Arash Rezaei, Bahram Azizollah و Ganji, Morteza Gholipour،Nanoscale field effect diode (FED) with improved speed and ION/IOFF ratio،IET Circuits Devices and Systems،2019.
167. Arash Rezaei, Bahram Azizollah و Ganji, Morteza Gholipour،Nanoscale field effect diode (FED) with improved speed and ION/IOFF ratio،IET Circuits Devices and Systems،2019.
168. Arash Rezaei, Bahram Azizollah و Ganji, Morteza Gholipour،Nanoscale field effect diode (FED) with improved speed and ION/IOFF ratio،IET Circuits Devices and Systems،2019.
169. Morteza Gholipour, Ying و Yu Chen, Deming Chen،Compact Modeling to Device-and Circuit-Level Evaluation of Flexible TMD Field-Effect Transistors،IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS،2018.
170. Arash Rezaei, Bahram Azizollah و Ganji, Morteza Gholipour،Effects of the Channel Length on the Nanoscale Field Effect Diode Performance،Journal of Optoelectronical Nanostructures،2018.
171. Morteza Gholipour, Ying و Yu Chen, Deming Chen،Compact Modeling to Device-and Circuit-Level Evaluation of Flexible TMD Field-Effect Transistors،IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS،2018.
172. Arash Rezaei, Bahram Azizollah و Ganji, Morteza Gholipour،Effects of the Channel Length on the Nanoscale Field Effect Diode Performance،Journal of Optoelectronical Nanostructures،2018.
173. Morteza Gholipour, Ying و Yu Chen, Deming Chen،Compact Modeling to Device-and Circuit-Level Evaluation of Flexible TMD Field-Effect Transistors،IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS،2018.
174. Arash Rezaei, Bahram Azizollah و Ganji, Morteza Gholipour،Effects of the Channel Length on the Nanoscale Field Effect Diode Performance،Journal of Optoelectronical Nanostructures،2018.
175. Morteza Gholipour, Ying و Yu Chen, Deming Chen،Compact Modeling to Device-and Circuit-Level Evaluation of Flexible TMD Field-Effect Transistors،IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS،2018.
176. Arash Rezaei, Bahram Azizollah و Ganji, Morteza Gholipour،Effects of the Channel Length on the Nanoscale Field Effect Diode Performance،Journal of Optoelectronical Nanostructures،2018.
177. Morteza Gholipour, Ying و Yu Chen, Deming Chen،Compact Modeling to Device-and Circuit-Level Evaluation of Flexible TMD Field-Effect Transistors،IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS،2018.
178. Arash Rezaei, Bahram Azizollah و Ganji, Morteza Gholipour،Effects of the Channel Length on the Nanoscale Field Effect Diode Performance،Journal of Optoelectronical Nanostructures،2018.
179. Morteza Gholipour, Ying و Yu Chen, Deming Chen،Compact Modeling to Device-and Circuit-Level Evaluation of Flexible TMD Field-Effect Transistors،IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS،2018.
180. Arash Rezaei, Bahram Azizollah و Ganji, Morteza Gholipour،Effects of the Channel Length on the Nanoscale Field Effect Diode Performance،Journal of Optoelectronical Nanostructures،2018.
181. Morteza Gholipour،A Compact Short-Channel Model for Symmetric Double-Gate TMDFET in Subthreshold Region،IEEE TRANSACTIONS ON ELECTRON DEVICES،2017.
182. Morteza Gholipour،A Compact Short-Channel Model for Symmetric Double-Gate TMDFET in Subthreshold Region،IEEE TRANSACTIONS ON ELECTRON DEVICES،2017.
183. Morteza Gholipour،A Compact Short-Channel Model for Symmetric Double-Gate TMDFET in Subthreshold Region،IEEE TRANSACTIONS ON ELECTRON DEVICES،2017.
184. Morteza Gholipour،A Compact Short-Channel Model for Symmetric Double-Gate TMDFET in Subthreshold Region،IEEE TRANSACTIONS ON ELECTRON DEVICES،2017.
185. Morteza Gholipour،A Compact Short-Channel Model for Symmetric Double-Gate TMDFET in Subthreshold Region،IEEE TRANSACTIONS ON ELECTRON DEVICES،2017.
186. Morteza Gholipour،A Compact Short-Channel Model for Symmetric Double-Gate TMDFET in Subthreshold Region،IEEE TRANSACTIONS ON ELECTRON DEVICES،2017.
187. Morteza Gholipour, Ying و Yu Chen, Amit Sangai, Nasser Masoumi, Deming Chen،Analytical SPICE-Compatible Model of Schottky-Barrier-Type GNRFETs With Performance Analysis،IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS،2016.
188. Morteza Gholipour, Ying و Yu Chen, Amit Sangai, Nasser Masoumi, Deming Chen،Analytical SPICE-Compatible Model of Schottky-Barrier-Type GNRFETs With Performance Analysis،IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS،2016.
189. Morteza Gholipour, Ying و Yu Chen, Amit Sangai, Nasser Masoumi, Deming Chen،Analytical SPICE-Compatible Model of Schottky-Barrier-Type GNRFETs With Performance Analysis،IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS،2016.
190. Morteza Gholipour, Ying و Yu Chen, Amit Sangai, Nasser Masoumi, Deming Chen،Analytical SPICE-Compatible Model of Schottky-Barrier-Type GNRFETs With Performance Analysis،IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS،2016.
191. Morteza Gholipour, Ying و Yu Chen, Amit Sangai, Nasser Masoumi, Deming Chen،Analytical SPICE-Compatible Model of Schottky-Barrier-Type GNRFETs With Performance Analysis،IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS،2016.
192. Morteza Gholipour, Ying و Yu Chen, Amit Sangai, Nasser Masoumi, Deming Chen،Analytical SPICE-Compatible Model of Schottky-Barrier-Type GNRFETs With Performance Analysis،IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS،2016.
193. Ying و Yu Chen, Amit Sangai, Artem Rogachev, Morteza Gholipour, Giuseppe Iannaccone, Gianluca Fiori, Deming Chen،A SPICE-Compatible Model of MOS-Type Graphene Nano-Ribbon Field-Effect Transistors Enabling Gate- and Circuit-Level Delay and Power Analysis Under Process Variation،IEEE TRANSACTIONS ON NANOTECHNOLOGY،2015.
194. Ying و Yu Chen, Amit Sangai, Artem Rogachev, Morteza Gholipour, Giuseppe Iannaccone, Gianluca Fiori, Deming Chen،A SPICE-Compatible Model of MOS-Type Graphene Nano-Ribbon Field-Effect Transistors Enabling Gate- and Circuit-Level Delay and Power Analysis Under Process Variation،IEEE TRANSACTIONS ON NANOTECHNOLOGY،2015.
195. Ying و Yu Chen, Amit Sangai, Artem Rogachev, Morteza Gholipour, Giuseppe Iannaccone, Gianluca Fiori, Deming Chen،A SPICE-Compatible Model of MOS-Type Graphene Nano-Ribbon Field-Effect Transistors Enabling Gate- and Circuit-Level Delay and Power Analysis Under Process Variation،IEEE TRANSACTIONS ON NANOTECHNOLOGY،2015.
196. Ying و Yu Chen, Amit Sangai, Artem Rogachev, Morteza Gholipour, Giuseppe Iannaccone, Gianluca Fiori, Deming Chen،A SPICE-Compatible Model of MOS-Type Graphene Nano-Ribbon Field-Effect Transistors Enabling Gate- and Circuit-Level Delay and Power Analysis Under Process Variation،IEEE TRANSACTIONS ON NANOTECHNOLOGY،2015.
197. Ying و Yu Chen, Amit Sangai, Artem Rogachev, Morteza Gholipour, Giuseppe Iannaccone, Gianluca Fiori, Deming Chen،A SPICE-Compatible Model of MOS-Type Graphene Nano-Ribbon Field-Effect Transistors Enabling Gate- and Circuit-Level Delay and Power Analysis Under Process Variation،IEEE TRANSACTIONS ON NANOTECHNOLOGY،2015.
198. Ying و Yu Chen, Amit Sangai, Artem Rogachev, Morteza Gholipour, Giuseppe Iannaccone, Gianluca Fiori, Deming Chen،A SPICE-Compatible Model of MOS-Type Graphene Nano-Ribbon Field-Effect Transistors Enabling Gate- and Circuit-Level Delay and Power Analysis Under Process Variation،IEEE TRANSACTIONS ON NANOTECHNOLOGY،2015.
199. Morteza Gholipour, Nasser Masoumi, Ying و Yu Christine Chen, Deming Chen, Mahdi Pourfath،Asymmetric Gate Schottky-Barrier Graphene Nanoribbon FETs for Low-Power Design،IEEE TRANSACTIONS ON ELECTRON DEVICES،2014.
200. Morteza Gholipour, Nasser Masoumi،Graphene nanoribbon crossbar architecture for low power and dense circuit implementations،MICROELECTRONICS JOURNAL،2014.
201. Morteza Gholipour, Nasser Masoumi, Ying و Yu Christine Chen, Deming Chen, Mahdi Pourfath،Asymmetric Gate Schottky-Barrier Graphene Nanoribbon FETs for Low-Power Design،IEEE TRANSACTIONS ON ELECTRON DEVICES،2014.
202. Morteza Gholipour, Nasser Masoumi،Graphene nanoribbon crossbar architecture for low power and dense circuit implementations،MICROELECTRONICS JOURNAL،2014.
203. Morteza Gholipour, Nasser Masoumi, Ying و Yu Christine Chen, Deming Chen, Mahdi Pourfath،Asymmetric Gate Schottky-Barrier Graphene Nanoribbon FETs for Low-Power Design،IEEE TRANSACTIONS ON ELECTRON DEVICES،2014.
204. Morteza Gholipour, Nasser Masoumi،Graphene nanoribbon crossbar architecture for low power and dense circuit implementations،MICROELECTRONICS JOURNAL،2014.
205. Morteza Gholipour, Nasser Masoumi, Ying و Yu Christine Chen, Deming Chen, Mahdi Pourfath،Asymmetric Gate Schottky-Barrier Graphene Nanoribbon FETs for Low-Power Design،IEEE TRANSACTIONS ON ELECTRON DEVICES،2014.
206. Morteza Gholipour, Nasser Masoumi،Graphene nanoribbon crossbar architecture for low power and dense circuit implementations،MICROELECTRONICS JOURNAL،2014.
207. Morteza Gholipour, Nasser Masoumi, Ying و Yu Christine Chen, Deming Chen, Mahdi Pourfath،Asymmetric Gate Schottky-Barrier Graphene Nanoribbon FETs for Low-Power Design،IEEE TRANSACTIONS ON ELECTRON DEVICES،2014.
208. Morteza Gholipour, Nasser Masoumi،Graphene nanoribbon crossbar architecture for low power and dense circuit implementations،MICROELECTRONICS JOURNAL،2014.
209. Morteza Gholipour, Nasser Masoumi, Ying و Yu Christine Chen, Deming Chen, Mahdi Pourfath،Asymmetric Gate Schottky-Barrier Graphene Nanoribbon FETs for Low-Power Design،IEEE TRANSACTIONS ON ELECTRON DEVICES،2014.
210. Morteza Gholipour, Nasser Masoumi،Graphene nanoribbon crossbar architecture for low power and dense circuit implementations،MICROELECTRONICS JOURNAL،2014.
211. Morteza Gholipour, Nasser Masoumi،Design investigation of nanoelectronic circuits using crossbar-based nanoarchitectures،MICROELECTRONICS JOURNAL،2013.
212. Morteza Gholipour, Nasser Masoumi،Design investigation of nanoelectronic circuits using crossbar-based nanoarchitectures،MICROELECTRONICS JOURNAL،2013.
213. Morteza Gholipour, Nasser Masoumi،Design investigation of nanoelectronic circuits using crossbar-based nanoarchitectures،MICROELECTRONICS JOURNAL،2013.
214. Morteza Gholipour, Nasser Masoumi،Design investigation of nanoelectronic circuits using crossbar-based nanoarchitectures،MICROELECTRONICS JOURNAL،2013.
215. Morteza Gholipour, Nasser Masoumi،Design investigation of nanoelectronic circuits using crossbar-based nanoarchitectures،MICROELECTRONICS JOURNAL،2013.
216. Morteza Gholipour, Nasser Masoumi،Design investigation of nanoelectronic circuits using crossbar-based nanoarchitectures،MICROELECTRONICS JOURNAL،2013.

Morteza Gholipour

Associate Professor Morteza Gholipour

Morteza Gholipour

Subjects Taught

Executions And Scientific Activities

Papers in Journals

Books